M54577FP MITSUBISHI, M54577FP Datasheet
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M54577FP
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M54577FP Summary of contents
Page 1
... DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. FEATURES Medium breakdown voltage (BV CEO Output sink current (I = 30mA) C(max) Driving available with MOS (PMOS, CMOS) IC output ...
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... C (1)Pulse generator (PG) characteristics : PRR=1kHz 6ns 6ns (2)Input-output conditions : R = 500 , Vo = 10V (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> (Unless otherwise noted –20 ~ +75 C) Limits min typ max 4 ...
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... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 1.5 1.0 0 Ambient temperature Output Saturation Voltage Collector Current Characteristics 0.02 0.04 Output saturation voltage V MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 100 10 Grounded Emitter Transfer Characteristics 3.0V ...