MBM29LV016B-12PTN Fujitsu, MBM29LV016B-12PTN Datasheet

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MBM29LV016B-12PTN

Manufacturer Part Number
MBM29LV016B-12PTN
Description
MBM29LV016B-12PTN16M (2M x 8) BIT
Manufacturer
Fujitsu
Datasheet

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Part Number:
MBM29LV016B-12PTN
Manufacturer:
FUJITSU
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FUJITSU SEMICONDUCTOR
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FLASH MEMORY
CMOS
16M (2M
MBM29LV016T
Embedded Erase
FEATURES
• Single 3.0 V read, program and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Low V
• Erase Suspend/Resume
• Sector protection
• Sector Protection set function by Extended sector protect command
• Temporary sector unprotection
• In accordance with CFI (Common Flash Memory Interface)
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
80 ns maximum access time
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
T = Top sector
B = Bottom sector
Automatically pre-programs and erases the chip or any sector
Automatically programs and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, automatically switches themselves to low power mode
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Hardware method disables any combination of sectors from program or erase operations
Temporary sector unprotection via the RESET pin
CC
TM
write inhibit
and Embedded Program
TM
Algorithms
TM
Algorithms
2.5 V
TM
-80/-90/-12
are trademarks of Advanced Micro Devices, Inc.
8) BIT
2
PROMs
/MBM29LV016B
DS05-20855-4E
-80/-90/-12

Related parts for MBM29LV016B-12PTN

MBM29LV016B-12PTN Summary of contents

Page 1

... Sector Protection set function by Extended sector protect command • Temporary sector unprotection Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) Embedded Erase TM and Embedded Program 8) BIT /MBM29LV016B -80/-90/-12 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. DS05-20855-4E -80/-90/-12 ...

Page 2

... MBM29LV016T -80/-90/-12 PACKAGE 40-pin plastic TSOP (I) (FPT-40P-M06) 2 /MBM29LV016B 40-pin plastic TSOP (I) Marking Side Marking Side -80/-90/-12 (FPT-40P-M07) ...

Page 3

... The MBM29LV016T/B memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. /MBM29LV016B -80/-90/-12 and 5 are not required for write or erase operations. ...

Page 4

... SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 MBM29LV016T Top Boot Sector Architecture 4 /MBM29LV016B Sector Size 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes ...

Page 5

... Kbytes SA29 64 Kbytes SA30 64 Kbytes SA31 64 Kbytes SA32 64 Kbytes SA33 64 Kbytes SA34 64 Kbytes MBM29LV016B Bottom Boot Sector Architecture /MBM29LV016B -80/-90/- Address Range 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH 40000H to 4FFFFH 50000H to 5FFFFH 60000H to 6FFFFH ...

Page 6

... RY/BY Buffer State Control RESET Command Register CE OE Low V Detector /MBM29LV016B MBM29LV016T/MBM29LV016B +0.3 V -80 –0.3 V +0.6 V — –0 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch ...

Page 7

... /MBM29LV016B -80/-90/-12 TSOP (I) (Marking Side) MBM29LV016T/MBM29LV016B Standard Pinout FPT-40P-M06 (Marking Side) MBM29LV016T/MBM29LV016B Reverse Pinout FPT-40P-M07 -80/-90/- ...

Page 8

... Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 6. 2. Refer to the section on Sector Protection can 3.3 V ±10 also used for the extended sector protection. 8 /MBM29LV016B Table 1 MBM29LV016T/B Pin Configuration Pin ...

Page 9

... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV016 T -80 DEVICE NUMBER/DESCRIPTION MBM29LV016 16 Mega-bit (2M 3.0 V-only Read, Write, and Erase /MBM29LV016B -80/-90/-12 PTN PACKAGE TYPE PTN = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout PTR = 40-Pin Thin Small Outline Package (TSOP) Reverse Pinout ...

Page 10

... To activate this mode, the programming equipment must force V identifier bytes may then be sequenced from the device outputs by toggling address A addresses are DON’T CARES except A 10 /MBM29LV016B - t time.) See Figure 5.1 for timing specifications. ACC CE ), output from the device is disabled. This will cause the output pins IH (11 ...

Page 11

... Byte represents the manufacture’s code (Fujitsu = 04H) and code (MBM29LV016T = C7H, MBM29LV016B = 4CH). All identifiers for manufactures and device will exhibit odd parity with DQ defined as the parity bit. In order to read the proper device codes when executing the autoselect must be V ...

Page 12

... SA25 1 1 SA26 1 1 SA27 1 1 SA28 1 1 SA29 1 1 SA30 1 1 SA31 1 1 SA32 1 1 SA33 1 1 SA34 /MBM29LV016B Sector Address Tables (MBM29LV016T ...

Page 13

... SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 /MBM29LV016B -80/-90/-12 Sector Address Tables (MBM29LV016B ...

Page 14

... V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the taken away from the RESET pin, all the previously protected sectors will be protected again. See figure 15 and 22. 14 /MBM29LV016B , while address pin A ...

Page 15

... Table 6 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the sector Erase operation is in progress. Moreover, both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that commands are always written at DQ /MBM29LV016B -80/-90/-12 Second Fourth Bus ...

Page 16

... The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address X001H returns the device code (MBM29LV016T = C7H, MBM29LV016B = 4CH). (See Tables 3.1 and 3.2.) All manufacturer and device codes will exhibit odd parity with the MSB (DQ Sector state (protection or unprotection) will be informed address X0002H ...

Page 17

... The interrupts can be re-enabled after the last Sector Erase command is written. A time-out from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs within the 50 µs time-out window the timer is reset. (Monitor DQ /MBM29LV016B -80/-90/-12 is equivalent to data written to this ...

Page 18

... To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 18 /MBM29LV016B , Sector Erase Timer.) Any command other than Sector 3 is “1” (See Write Operation Status section) ...

Page 19

... Following the command write, a logical “1” at device output DQ for protected sector in the read operation. If the output data is logical “0”, please repeat to write extended sector protect command (60H) again. To terminate the opetation necessary to set RESET pin to V /MBM29LV016B -80/-90/-12 during Fast Mode. ...

Page 20

... DQ bit. However, successive reads from the erase-suspended sector will cause DQ 2 toggle and DQ are reserve pins for future use Fujitsu internal use only /MBM29LV016B Table 8 Hardware Sequence Flags Toggle 7 0 Toggle 1 Data ...

Page 21

... Either toggling will cause the DQ cause the DQ to toggle. 6 See Figure 10 and Figure 20 for the Toggle Bit I timing specifications and diagrams. /MBM29LV016B -80/-90/-12 . Upon completion of the Embedded Program 7 output. Upon completion of the 7 ...

Page 22

... When the devices are in the 2 erase mode, DQ toggles if this bit is read from the erasing sector /MBM29LV016B , DQ is the only operating function of the device under 7 6 never stops toggling. Once the device has exceeded timing limits, the ...

Page 23

... RY/BY output signal should be ignored during the RESET pulse. See Figure 12 for the timing diagram. Refer to Temporary Sector Unprotection for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used. /MBM29LV016B -80/-90/-12 Table 9 Toggle Bit Status ...

Page 24

... logical one. Power-up Write Inhibit Power-up of the device with The internal state machine is automatically reset to the read mode on power-up. 24 /MBM29LV016B power-up and power-down, a write cycle is locked out for V CC < the command register is disabled and all internal program/erase circuits ...

Page 25

... Device size = 2 N byte 27H 28H Flash Device Interface description 29H 2AH Max. number of byte in multi-byte write = 2 N 2BH Number of Erase Block 2CH Regions within device /MBM29LV016B -80/-90/- Description 51H 52H Erase Block Region 1 Information 59H 02H 00H Erase Block Region 2 ...

Page 26

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 26 /MBM29LV016B , OE, and RESET (Note 1) ............ –0 OE, and RESET pins are –0.5 V. During voltage transitions – ...

Page 27

... V Figure +2.0 V Figure 2 +14.0 V +13 +0 Note : This waveform is applied for A Figure 3 /MBM29LV016B -80/-90/- Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. 9 Maximum Positive Overshoot Waveform 2 -80/-90/-12 ...

Page 28

... DC operating current and the frequency dependent component active while Embedded Erase or Embedded Program is in progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns not exceed /MBM29LV016B -80/-90/-12 Test Conditions Max ...

Page 29

... Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV016T/B-80/-90) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Device Under Test Notes including jig capacitance (MBM29LV016T/B-80/-90 100 pF including jig capacitance (MBM29LV016T/B-12) /MBM29LV016B -80/-90/-12 Test Setup — Min Max Max ...

Page 30

... OE Setup Time to WE Active (Note 2) OESP — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB — t RESET Hold Time Before Read RH 30 /MBM29LV016B Description Min. Min. Min. Min. Min. Min. Read Min. Toggle and Data Polling Min. Min. Min. Min. ...

Page 31

... JEDEC Standard — t Program/Erase Valid to RY/BY Delay BUSY — t Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. /MBM29LV016B -80/-90/-12 Description Max. (Note 2) Min. ID Min. -80/-90/-12 MBM29LV016T/B Unit -80 -90 - ...

Page 32

... MBM29LV016T -80/-90/-12 SWITCHING WAVEFORMS • Key to Switching Waveforms Addresses Outputs Figure 5.1 32 /MBM29LV016B WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: Changing, Any Change ...

Page 33

... MBM29LV016T Addresses t RH RESET HIGH-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations /MBM29LV016B -80/-90/- Addresses Stable t ACC Output Valid -80/-90/- ...

Page 34

... D is the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. Figure 6 AC Waveforms for Alternate WE Controlled Program Operations 34 /MBM29LV016B Data Polling ...

Page 35

... D is the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. Figure 7 AC Waveforms for Alternate CE Controlled Program Operations /MBM29LV016B -80/-90/-12 Data Polling ...

Page 36

... MBM29LV016T -80/-90/-12 Addresses GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555H for Chip Erase. Figure 8 36 /MBM29LV016B 555H 555H 2AAH 555H WPH AAH 55H 80H AC Waveforms for Chip/Sector Erase Operations ...

Page 37

... AC Waveforms for Data Polling during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations /MBM29LV016B -80/-90/- OEH WHWH1 Output Flag ...

Page 38

... MBM29LV016T -80/-90/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY 38 /MBM29LV016B The rising edge of the last WE signal READY Figure 12 RESET, RY/BY Timing Diagram -80/-90/-12 Entire programming or erase operations t BUSY t RB ...

Page 39

... VLHT VLHT WE t CSP CE Data t VLHT V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Figure 13 AC Waveforms for Sector Protection Timing Diagram /MBM29LV016B -80/-90/- WPP OESP VLHT t VLHT -80/-90/-12 SAY 01H ...

Page 40

... VIDR Add Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 150 s (min) Figure 14 40 /MBM29LV016B SPAX TIME-OUT 60H 60H Extended Sector Protection Timing Diagram -80/-90/-12 SPAX SPAY 40H 01H 60H t OE ...

Page 41

... Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 /MBM29LV016B -80/-90/-12 Program or Erase Command Sequence VLHT Unprotection period Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure -80/-90/-12 t ...

Page 42

... MBM29LV016T -80/-90/-12 EMBEDDED PROGRAM TM ALGORITHM Increment Address Figure 17 42 /MBM29LV016B Start Write Program Command Sequence (See Below) Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data Embedded Program TM Algorithm -80/-90/-12 ...

Page 43

... MBM29LV016T EMBEDDED PROGRAM TM ALGORITHM No Chip Erase Command Sequence (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H Figure 18 /MBM29LV016B -80/-90/-12 Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit from Device Data = FFH ? Yes Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence ...

Page 44

... MBM29LV016T -80/-90/- rechecked even /MBM29LV016B VA = Address for programming Start Read Byte ( Addr Yes DQ = Data Yes Read Byte ( Addr Yes DQ = Data Fail Pass = “1” because DQ may change simultaneously with Figure 19 ...

Page 45

... MBM29LV016T rechecked even “1” because changing to “1”. 5 Figure 20 /MBM29LV016B -80/-90/-12 Start Read Byte ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” Toggle ...

Page 46

... MBM29LV016T -80/-90/-12 Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed 46 /MBM29LV016B Start Setup Sector Addr 20 PLSCNT = RESET = Activate WE Pulse Time out 100 should remain V ...

Page 47

... MBM29LV016T Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 22 Temporary Sector Unprotection Algorithm /MBM29LV016B -80/-90/-12 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) -80/-90/-12 47 ...

Page 48

... MBM29LV016T -80/-90/-12 FAST MODE ALGORITHM Increment Address Figure 23 48 /MBM29LV016B Start 555H/AAH 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed XXXH/90H XXXH/F0H TM Embedded Program Algorithm for Fast Mode -80/-90/-12 Set Fast Mode In Fast Program ...

Page 49

... PLSCNT = 25? Yes Remove V from RESET Protect Other Sector ID Write Reset Command Remove V Device Failed Write Reset Command Figure 24 Extended Sector Protection Algorithm /MBM29LV016B -80/-90/-12 Start RESET = V ID Wait Extended Sector Protection Entry? Yes Write XXXH/60H PLSCNT = ...

Page 50

... Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz A 50 /MBM29LV016B Limits Min. Typ. Max. — — 8 300 — 16.8 50 100,000 — — Test Setup ...

Page 51

... LEAD No. 1 INDEX 20 19.00±0.20 (.748±.008) 0.15±0.05 0.10(.004) (.006±.002) 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1994 FUJITSU LIMITED F40008S-1C-1 C /MBM29LV016B -80/-90/-12 Details of "A" part 40 "A" 0.15(.006) 0.25(.010) 21 10.00±0.20 (.394±.008) 0.50(.0197) TYP 9.50(.374) REF. 0.50±0.10 0.20± ...

Page 52

... Tel: (65) 281-0770 Fax: (65) 281-0220 http://www.fmap.com.sg/ F9811 FUJITSU LIMITED Printed in Japan 52 /MBM29LV016B -80/-90/-12 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use ...

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