M6MGB162S4BVP MITSUBISHI, M6MGB162S4BVP Datasheet
M6MGB162S4BVP
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M6MGB162S4BVP Summary of contents
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... DESCRIPTION The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). 16M-bits Flash memory is a 1048576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell ...
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... Y-GATE / SENSE AMP. STATUS / ID REGISTER CUI WSM WSM DATA INPUTS/OUTPUTS 524288 WORD x 8 BITS CLOCK GENERATOR MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) 32KW 32KW 16KW 16KW 16KW 16KW 16KW 16KW 16KW 16KW MULTIPLEXER INPUT/OUTPUT ...
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... Parameter Block ...................... Bank(II) Main Block ......................................... Program/Erase cycles 3 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Boot Block 1048,576 word x 16bit M6MGB162S4BVP M6MGT162S4BVP Other Functions V = 2.7~3.6V CC Soft Ware Command Control Selective Block Lock 90ns (Max.) Erase Suspend/Resume Program Suspend/Resume Status Register Read 54 mW (Max ...
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... The power consumption becomes the same as the stand-by mode. While in this mode, the output data is latched and can be read out. New data is read out correctly when addresses are changed. MITSUBISHI LSIs After Sep. 1999 , Rev.2.0 ...
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... MEMORY ORGANIZATION The Flash Memory of M6MGB/T162S4BVP has one 16Kword boot block, seven 16Kword parameter blocks, for Bank(I) and twenty-eight 32Kword main blocks for Bank(II). A block is erased independently of other blocks in the array. MITSUBISHI LSIs Low LKO, see P.10. LKO, Sep. 1999 , Rev.2.0 ...
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... PARAMETER BLOCK 1 04000H-07FFFH 00000H-03FFFH 16Kword BOOT BLOCK (Word Mode) Flash Memory of M6MGB162S4BVP 6 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Memory Map MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) x16 ( Wordmode) ...
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... MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) F-RP# DQ 0-15 V Data out IH V Status Register Data IH Lock Bit Data ( Identifier Code ...
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... Bank Write D0H Bank Write 71H X Read 77H Write Bank Write Write X Write A7H MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) 2nd bus cycle 3rd ~129th bus cycles (Word Mode) Data Mode Address Address (DQ15- ...
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... Locked Locked Locked Unlocked Unlocked Locked All Blocks Unlocked "1" Ready Suspended Error Error Error - - - MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Note Definition "0" Busy Operation in Progress / Completed Successful Successful Successful - - - Sep. 1999 , Rev.2.0 ...
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... OUT F-V = 3.6V F-CE# =WE F-RP#=OE#=V IH F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH I = 4.0mA –2.0mA –100mA OH MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package ...
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... F-Vcc = 2.7V ~3.6V) Parameter Min 150 (Ta = -20 ~85°C, F-Vcc = 2.7V ~3.6V) Parameter Min 150 MITSUBISHI LSIs M6MGB/T162S4BVP Limits F-Vcc=2.7-3.6V Unit 90ns Typ Max 150 ns ns Limits F-Vcc=2 ...
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... Min 150 Typ Min 40 1.0 4 Typ Min Min Typ 2 MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Limits F-Vcc=2.7-3.6V Unit 90ns Typ Max ...
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... OLZ t CLZ OUTPUT VALID MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Read /Write Inhibit TEST CONDITIONS FOR AC CHARACTERISTICS Input voltage : Input rise and fall times : £5ns Reference voltage t at timing measurement : 1.5V ...
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... VALID a(CE) t a(OE OEH GHEL DIN DOUT DIN BLS MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) READ STATUS PROGRAM REGISTER ARRAY COMMAND BANK ADDRESS VALID 7FH t a(CE) t a(OE) t OEH t DAP SRD DIN t WHRL ...
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... DAP PROGRAM VALID OEH DIN EHRL t DAP MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) READ STATUS WRITE READ REGISTER ARRAY COMMAND BANK(I) ADDRESS VALID t a(CE) t a(OE) SRD FFH t BLH (to only BANK(I)) READ STATUS WRITE READ ...
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... CEPH t OEH t DAE 20H D0H t EHRL t BLS MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) READ STATUS ERASE REGISTER ARRAY COMMAND BANK ADDRESS VALID t a(CE) t a(OE) SRD t BLH READ STATUS ERASE REGISTER ARRAY COMMAND BANK ADDRESS VALID ...
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... ADDRESS VALID 01H~7EH 00H 7FH OEH DIN DIN DIN t DH MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Change Bank Address ARRAY READ FROM THE OTHER BANK WITH BGO VALID VALID VALID VALID t a(CE) t a(OE) SRD DOUT t ...
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... ADDRESS VALID VALID OEH DIN SRD EHRL MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Change Bank Address ARRAY READ FROM BANK(II) WITH BGO VALID VALID VALID VALID t a(CE) t a(OE) DOUT DOUT Change Bank Address ...
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... OEH D0H SRD EHRL MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Change Bank Address ARRAY READ FROM THE OTHER BANK WITH BGO VALID VALID t a(CE) t a(OE) DOUT DOUT Change Bank Address READ DATA FROM THE OTHER BANK ...
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... OEH Program Suspend Latency WP B0H t BLS t AH CEP t OEH Program Suspend Latency t WH B0H t BLS MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) READ STATUS REGISTER BANK ADDRESS VALID t a(CE) t a(OE) S.R.6,7=1 VALID SRD t BLH READ STATUS REGISTER BANK ADDRESS VALID ...
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... ADDRESS n, DATA n NO WRITE B0H ? YES STATUS REGISTER SUSPEND LOOP WRITE D0H YES FULL STATUS CHECK PAGE PROGRAM MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) LOCK BIT PROGRAM FLOW CHART START WRITE 77H WRITE D0H BLOCK ADDRESS SR ...
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... Please use BGO function. BLOCK ERASE FLOW CHART NO WRITE B0H ? YES SUSPEND LOOP WRITE D0H YES MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) START SUSPEND WRITE B0H STATUS REGISTER READ SR ...
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Read/Standby State 50H Clear Status Register D0H WD Setup State 55H 74H Clear Single Data Load Page Buffer to Flash Page Buffer to Page Buffer Setup Setup Setup OTHER Internal State Ready Read State with BGO Read Array (From The ...
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... Mode WE# OE# DQ0 High-Z Non selection L X Write Din H L Read Dout H H High-Z MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Icc Standby Active Active Active Sep. 1999 , Rev.2.0 ...
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... Output - open (duty 100%) < = S-CE 0.2V -W Other inputs=0~S-Vcc - 20 ~ +25 C S-CE=V IL Other inputs S-Vcc Conditions V =GND, V =25mVrms, f=1MHz GND,V =25mVrms, f=1MHz O O MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Ratings Units -0 -0.5 ~ S-Vcc + 0 S-Vcc 700 + +150 < 30ns S-Vcc=2 ...
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... Fig.1,CL=30pF CL=5pF (for ten,tdis) Min Min MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) 1TTL DQ CL Including scope and jig capacitance Fig.1 Output load Limits SRAM Units Max ...
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... CW t (CE (A- (W) dis t (OE) dis DATA IN STABLE MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package (CE) dis t (OE) dis VALID DATA (Note3) t (W) rec t (OE (W) en (D) Sep. 1999 , Rev.2.0 ...
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... Note 5: Don't apply inverted phase signal externally when DQ pin is in output mode. 28 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM ( DATA IN STABLE MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) t (W) rec (Note3) (D) Sep. 1999 , Rev.2.0 ...
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... S-Vcc S-CE 0.2V 29 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Test conditions S-Vcc=3.0V -W > S-CE 0.2V = other inputs=0~3V Test conditions 2.7V > S-CE 0. (PD) MITSUBISHI LSIs M6MGB/T162S4BVP 3.3V-ONLY FLASH MEMORY & Stacked-MCP (Multi Chip Package) Limits Min Typ Max 2.0 0 + + +25 ~ +40 C ...