M5M5V216ATP-55HI MITSUBISHI, M5M5V216ATP-55HI Datasheet

no-image

M5M5V216ATP-55HI

Manufacturer Part Number
M5M5V216ATP-55HI
Description
2097152-bit (131072-word by 16-bit) CMOS static RAM
Manufacturer
MITSUBISHI
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M5M5V216ATP-55HI
Manufacturer:
RENESAS
Quantity:
6 500
Part Number:
M5M5V216ATP-55HI
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
M5M5V216ATP-55HIA0
Manufacturer:
Renesas
Quantity:
100
revision-01, ' 98.12.08
PART NAME TABLE
M5M5V216ATP,RT
organized as 131,072-words by 16-bit, fabricated by
high-performance 0.25µm CMOS technology.
simple interfacing , battery operating and battery backup are the
important design objectives.
outline package. M5M5V216ATP (normal lead bend type package)
, M5M5V216ART (reverse lead bend type package) , both types
are very easy to design a printed circuit board.
From the point of operating temperature, the family is divided into
three versions; "Standard", "W-version", and "I-version". Those are
summarized in the part name table below.
-20 ~ +85 C
-40 ~ +85 C
DESCRIPTION
PIN CONFIGURATION
temperature
GND
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A16
A15
A14
A13
A12
0 ~ +70 C
W-
Vcc
WE
Operating
Standard
I-
A4
A3
A2
A1
A0
Version,
The M5M5V216A is suitable for memory applications where a
S
The M5M5V216A is a family of low voltage 2-Mbit static RAMs
M5M5V216ATP, RT are packaged in a 44-pin 400mil thin small
version
version
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
M5M5V216ATP , RT -55L
M5M5V216ATP , RT -70L
M5M5V216ATP , RT -55H
M5M5V216ATP , RT -70H
M5M5V216ATP , RT -55LW
M5M5V216ATP , RT -70LW
M5M5V216ATP , RT -55HW
M5M5V216ATP , RT -70HW
M5M5V216ATP , RT -55L I
M5M5V216ATP , RT -70L I
M5M5V216ATP , RT -55H I
M5M5V216ATP , RT -70H I
Part name
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GND
OE
BC2
BC1
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
A5
A6
A7
Vcc
NC
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Supply
Power
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
GND
DQ9
BC2
BC1
Vcc
NC
OE
NC
A10
A11
A8
A9
A5
A6
A7
MITSUBISHI ELECTRIC
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Mitsubishi's
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
Access
max.
time
10
11
12
13
14
15
16
17
18
19
20
21
22
FEATURES
25 C
0.3µA
0.3µA
0.3µA
1
2
3
4
5
6
7
8
9
* "typical" parameter is sampled, not 100% tested.
---
---
---
Stand-by current Icc
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,typ.)
No clocks, No refresh
Data retention supply voltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
typical *
GND
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A4
A3
A2
A1
A0
Vcc
WE
A16
S
A15
A14
A13
A12
40 C
1µA
1µA
1µA
---
---
---
DQ1 ~ DQ16
25 C
A0 ~ A16
1µA
1µA
1µA
Outline: TP :
---
---
---
GND
Pin
BC1
BC2
Vcc
OE
W
S
Ratings (max.)
NC: No Connection
40 C
(PD)
3µA
3µA
3µA
---
---
---
RT : 44P3W - J
, Vcc=3.0V
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Address input
Data input / output
Chip select input
Write control input
Output inable input
Power supply
Ground supply
70 C
20µA
20µA
20µA
8µA
8µA
8µA
44P3W - H
MITSUBISHI LSIs
Function
85 C
50µA
24µA
50µA
24µA
---
---
(3.0V, typ.)
(10MHz)
current
(1MHz)
Active
45mA
5mA
Icc1
1

Related parts for M5M5V216ATP-55HI

M5M5V216ATP-55HI Summary of contents

Page 1

... The M5M5V216A is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. M5M5V216ATP, RT are packaged in a 44-pin 400mil thin small outline package. M5M5V216ATP (normal lead bend type package) , M5M5V216ART (reverse lead bend type package) , both types are very easy to design a printed circuit board ...

Page 2

... M5M5V216ATP,RT FUNCTION The M5M5V216ATP,RT is organized as 131,072-words by 16-bit. These devices operate on a single +2.7~3.6V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. The operation mode are determined by a combination of the device control inputs BC1 , BC2 , and OE ...

Page 3

... M5M5V216ATP,RT ABSOLUTE MAXIMUM RATINGS Symbol Parameter V cc Supply voltage Input voltage V I Output voltage Power dissipation d Operating T a temperature Storage temperature T stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter V High-level input voltage IH V Low-level input voltage IL V High-level output voltage 1 OH1 V High-level output voltage 2 ...

Page 4

... M5M5V216ATP, Units Max Min Max Limits M5M5V216ATP, Min Max MITSUBISHI LSIs 1TTL Including scope and jig capacitance ...

Page 5

... M5M5V216ATP,RT (4)TIMING DIAGRAMS Read cycle A 0~16 BC1 and / or BC2 (Note3) S (Note3) OE (Note3 "H" level DQ 1~16 Write cycle ( W control mode ) A 0~16 BC1 and / or BC2 (Note3) S (Note3 1~16 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM ( (BC1) (BC2 ( (OE (OE) ...

Page 6

... M5M5V216ATP,RT Write cycle (BC control mode) A 0~16 BC1 and / or BC2 S (Note3) (Note5) W (Note3) DQ 1~16 Write cycle (S control mode) A 0~16 BC1 and / or BC2 (Note3) S (Note5) W (Note3) DQ 1~16 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S low , overlaps BC1 and/or BC2 low and W low. ...

Page 7

... M5M5V216ATP,RT POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD (BC) Byte control input BC1 & BC2 V I (S) Chip select input S Power down Icc (PD) supply current (2) TIMING REQUIREMINTS Symbol Parameter t Power down set up time su (PD) Power down recovery time ...

Related keywords