M5M51016BTP-10VLL MITSUBISHI, M5M51016BTP-10VLL Datasheet
M5M51016BTP-10VLL
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M5M51016BTP-10VLL Summary of contents
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... They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. ...
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... H 65536 WORDS x16 BITS ( 1024 ROWS x 256 COLUMNS x 4 BLOCKS ) CLOCK GENERATOR MITSUBISHI ELECTRIC MITSUBISHI LSIs M5M51016BTP,RT-10VL, -10VLL and high level low level, the chips and the memory data can be held at +2V power CC3 ...
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... Test conditions , =GND, V =25mVrms, f=1MHz =GND, V =25mVrms, f=1MHz =GND,V =25mVrms, f=1MHz O O MITSUBISHI ELECTRIC MITSUBISHI LSIs M5M51016BTP,RT-10VL, Ratings - 0.3 ~ 4.6 - 0.3* ~ Vcc + 0 Vcc 150 Limits Typ Min 2.0 Vcc+0.3V - 0.3* 2.4 Vcc-0. Min IH cycle 1MHz ) IL Min cycle ...
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... Parameter high 1 high 2 low 1 low 2 Parameter MITSUBISHI ELECTRIC MITSUBISHI LSIs M5M51016BTP,RT-10VL, -10VLL 1TTL Including scope L Fig.1 Output load Limits M5M51016B -10VL,-10VLL Min Typ Max 100 100 100 100 100 ...
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... DATA IN STABLE t su (D) MITSUBISHI ELECTRIC MITSUBISHI LSIs M5M51016BTP,RT-10VL, -10VLL t v (A) (Note dis (BC1) t dis (BC2) (Note 3) t dis (CS) (Note 3) t dis (OE) DATA VALID (Note 3) (Note 3) t rec (W) ...
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... Note 3: Hatching indicates the state is "don't care". 4: Writing is executed while CS high overlaps BC 5: When the falling edge simultaneously or prior to the falling edge of BC maintained in the high impedance state. 6: Don't apply inverted phase signal externally when DQ pin is output mode. M5M51016BTP,RT-10VL, 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM ...
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... CS > V 0.2V,other inputs unless otherwise noted ) C Test conditions 3. (PD) BC & > 3. (PD) < CS 0.2V MITSUBISHI ELECTRIC MITSUBISHI LSIs M5M51016BTP,RT-10VL, Limits Min Typ 2 2.0 -VL 3V 0.2V, -VLL 0.3 (Note Limits Min Typ 0 5 3.0V t rec (PD) 2.0V 0.2V CC 3.0V t rec (PD) 0.2V 9 Jul ,1997 ...