M5M29F25611VP MITSUBISHI, M5M29F25611VP Datasheet
M5M29F25611VP
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M5M29F25611VP Summary of contents
Page 1
... M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY PIN CONFIGURATION(TOP VIEW) GND 1 Vcc 2 3 DQ0 4 DQ1 5 DQ2 6 DQ3 7 GND M5M29F25611VP Vcc 17 DQ4 18 DQ5 19 DQ6 20 DQ7 GND 23 GND ...
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... GND SC 2 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY 16384 x (2048+64 X-Decoder Memory Matrix Data Register(2048+64) Input Data Control Y-Address Counter Read/Program/ Erase Control MITSUBISHI LSIs M5M29F25611VP 2048+64 8 Data Y-Gating Output Buffer Y-Decoder ~ Rev.2.3.1 2001.2.2 ...
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... DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 First Cycle SA0 SA1 SA2 SA8 Second Cycle SA9 SA10 CA0 First Cycle CA1 CA2 CA8 CA9 Second Cycle CA10 MITSUBISHI LSIs M5M29F25611VP Bytes 64 Bytes 64 Bytes 64 Bytes 64 Bytes 64 Bytes 64 Column Address 83FH 800H Control Bytes ...
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... (GND±0.2V) level when Vcc is turned on and off. In this way, is and Address is latched when V IL level after the (40H) command in programming operation Also, no serial clock can be input during V OL M5M29F25611VP (note3 ILR IHR IHR ...
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... With CA (note 7) 4+2h(note6) 4 Bus cycles 3+2h(note6) With CA 4+2h(note6) (note 7) With CA 4+2h(note6) (note 7) is set to is low and the device identifier code is output when MITSUBISHI LSIs M5M29F25611VP Second cycle First Data Operation mode in in Write Write SA(1) (note 4) 00H Write SA(1) (note 4) Write 00H ...
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... After the programming starts,the program completion can be checked through the R/ single and status data polling. The sector valid data should be included in the program data PD2048-PD2111. In this mode, E/W number of times must be counted whenever program(4) execute. 6 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY is ...
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... Sector Address Memory Array 0 Column 0 Register address Serial read(1), (With CA) Program(1), (With CA) Program(4), (With CA) and , respectively MITSUBISHI LSIs M5M29F25611VP 16383 Sector Address Memory Array 0 2048 2111 0 Serial read(2) Program(3) and the status register read V IL Rev.2.3.1 2111 Register is ...
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... Command / Address / Data Input Sequence 8 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... Command / Address / Data Input Sequence 9 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... Command / Address / Data Input Sequence 10 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... PD0 ~ PD2111 SA(1) SA(2) Sector address set up input SC, Program finish ERROR Error Error Standby Output disable (note3 FFH, Error Status Flag is cleared. MITSUBISHI LSIs M5M29F25611VP Column address input CA(1)',CA(2 Read(1), (2) B0H Sector address Erase start input SC, CA(1)',CA(2)' PD(m)~ PD(m+j) 40H Program Program data start ...
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... OUT I = 0mA 20MHz OUT I = 2mA -2mA OH 50ns. min = -2.0V for pulse width V IL 20ns over the specified maximum value MITSUBISHI LSIs M5M29F25611VP Ratings +70 -65 to +125 -10 to +80 Limits Typ Max Min - - = 0V OUT Limits Min ...
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... Notes : 1. tDF is a time after which the DQ pins become open. 2. tWSD(min) is specified as a reference point only for SC, if tWSD is greater than the specified tWSD(min) limit, then access time is controlled exclusively by tSAC. 13 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Test conditions ...
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... BSY Ready HighZ level as shown in page 12 at the rising and falling edges of Vcc to V ILR level specified in page 12 while DQ7 outputs the V IHR level MITSUBISHI LSIs M5M29F25611VP t t CES CEH CESR t CWRH t t VRH DFP (note1) Undefined level in the ...
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... SP SPL SAC AH SAC t OEL SA(2) out out D2048 D2049 t t DBR RS HighZ t RBSY M5M29F25611VP t COH (note1) t CPH t (note2) SOH SAC SAC DF SH out out / D2111 / (note2) out out D2111 . Rev.2.3.1 MITSUBISHI LSIs t CEH CDH ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Test conditions GND GND V V OUT ± 0. ± 0. GND ± 0.2V In programming In erase I = 2mA -2mA OH 20ns. MITSUBISHI LSIs M5M29F25611VP Limits Min Typ Max - - 0 -0 0.8 2 ...
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... OE to output delay high to output float setup time Notes : 1. tDF is a time after which the DQ pins become open. 19 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Limits Test condition Min Typ 120 ...
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... RS t hold time for CWH t hold time for CWHR t hold time for WWH 20 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Test condition on Recovery Read Mode MITSUBISHI LSIs M5M29F25611VP Limits Unit Min Typ Max µs 1.5 ...
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... OEPS t t WPH WPH CDS WP t CDH t t CDH SCHW SA(1) SA(2) B0H t DB HighZ MITSUBISHI LSIs M5M29F25611VP t COS ASE RDY DQ7=V DQ7 (note2) HighZ (note1 Rev.2.3.1 t CDS . 2001.2.2 ...
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... WP CDSS SCC t (note1) CDH t SPL SDH SDS AS DS SA(2) PD0 PD1 PD2111 40H HighZ MITSUBISHI LSIs M5M29F25611VP t COS OEPS t ASP(1) t CDH t SCHW DQ7=V DQ7 (note2 Rev.2.3.1 t RDY t CDS ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... CDSS SCC t CDH (note1) t SPL SDH SDS AS DS SA(2) PD0 PD1 PD2111 40H HighZ MITSUBISHI LSIs M5M29F25611VP t COS OEPS t ASP(2) t CDH t SCHW DQ7=V DQ7 (note2 Rev.2.3.1 t RDY t CDS ...
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... CDSS WP t SCC t (note1) CDH t SPL SDH t t SDS AS DS SA(2) PD2048 PD2049 PD2111 40H HighZ MITSUBISHI LSIs M5M29F25611VP t COS t t CEH OEPS t ASP(3) t CDH t SCHW DQ7=V DQ7 (note2 Rev ...
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... CDH (note1) t SPL t WSD SDH SDS AS DS SA(2) PD0 PD1 PD2111 40H t DBR t RS HighZ t RBSY MITSUBISHI LSIs M5M29F25611VP t COS t CEH OEPS t ASP (4) t CDH t SCHW DQ7=V DQ7 (note2 Rev.2.3.1 t RDY ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP ~ ~ ~ ~ Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY t COH (note1) t CDOH CDH t t CDAC CDAC CDF CDF Manufacturer Device Manufacturer Code Code Code HighZ MITSUBISHI LSIs M5M29F25611VP t COH (note1) t COS t SCS Status Register . Rev.2.3.1 2001.2.2 ...
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... OES (note2) SCC SCC SOH SPL SAC SAC SAC t SAC OEL out out D0 D1 D2111 HighZ . MITSUBISHI LSIs M5M29F25611VP t COH (note1) t CPH t CEH CDH t CDS (note3) out (note2) FFH Rev.2.3.1 2001.2.2 ...
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... CWC OEPS t t WPH WPH CDS WP t CDH t t CDH SCHW SA(2) 40H t DB HighZ MITSUBISHI LSIs M5M29F25611VP t COS ASP(4) RDY DQ7=V DQ7 (note2) HighZ (note1) V Rev.2.3.1 t CDS . OL 2001.2.2 ...
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... M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... OL "V " = Fail "V " = Pass OH OL "V " = Fail "V " = Pass OH OL Outputs a and should be masked out during the status data polling V OL mode. MITSUBISHI LSIs M5M29F25611VP to indicate that V OL when the operation V OH Definition Rev.2.3.1 2001.2.2 ...
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... The write/erase endurance cycles. 35 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY 820H 821H 822H 1CH 71H C7H Min 16,057 (98%) 5 MITSUBISHI LSIs M5M29F25611VP 823H 824H 825H 1CH 71H C7H Rev.2.3.1 2001.2.2 ...
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... Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 36 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Remember to give due they do not convey any ...