KM48V8104BK-6 Samsung, KM48V8104BK-6 Datasheet

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KM48V8104BK-6

Manufacturer Part Number
KM48V8104BK-6
Description
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
Manufacturer
Samsung
Datasheet
KM48V8004B, KM48V8104B
FEATURES
• Part Identification
¡Ü
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal
or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh
capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Sam-
sung s advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Refresh Cycles
* Access mode & RAS only refresh mode
• Active Power Dissipation
KM48V8004B*
KM48V8104B
Speed
CAS-before-RAS & Hidden refresh mode
Performance Range:
- KM48V8004B/B-L(3.3V, 8K Ref.)
- KM48V8104B/B-L(3.3V, 4K Ref.)
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
-45
-5
-6
Speed
-45
Part
NO.
-5
-6
45ns
50ns
60ns
t
RAC
Refresh
cycle
8K
4K
12ns
13ns
15ns
t
360
324
288
CAC
8K
8M x 8bit CMOS Dynamic RAM with Extended Data Out
Normal
64ms
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
104ns
84ns
74ns
Refresh time
t
RC
468
432
396
Unit : mW
4K
128ms
L-ver
17ns
20ns
25ns
t
HPC
DESCRIPTION
(A0~A11)*1
(A0~A10)*1
A0~A12
A0~A9
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V 0.3V power supply
Note) *1 : 4K Refresh
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
Memory Array
8,388,608 x 8
Row Decoder
Cells
CMOS DRAM
Vcc
Vss
Data out
Data in
Buffer
Buffer
OE
DQ0
DQ7
to

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KM48V8104BK-6 Summary of contents

Page 1

... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. DESCRIPTION • Extended Data Out Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • ...

Page 2

KM48V8004B, KM48V8104B •KM48V80(1)04BK DQ0 2 DQ1 3 DQ2 4 DQ3 5 N RAS ...

Page 3

KM48V8004B, KM48V8104B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...

Page 4

KM48V8004B, KM48V8104B DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t ...

Page 5

KM48V8004B, KM48V8104B CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ7] AC CHARACTERISTICS ( Test condition : V =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter ...

Page 6

KM48V8004B, KM48V8104B AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS set-up time (CAS -before-RAS ...

Page 7

KM48V8004B, KM48V8104B TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...

Page 8

KM48V8004B, KM48V8104B NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring ...

Page 9

KM48V8004B, KM48V8104B READ CYCLE RAS CAS ASR ADDRESS ...

Page 10

KM48V8004B, KM48V8104B WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS ...

Page 11

KM48V8004B, KM48V8104B WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS V - ...

Page 12

KM48V8004B, KM48V8104B READ - MODIFY - WRITE CYCLE RAS CRP CAS ASR ROW A ADDR ...

Page 13

KM48V8004B, KM48V8104B HYPER PAGE READ CYCLE RAS CRP CAS ASR RAH ROW A ADDR ...

Page 14

KM48V8004B, KM48V8104B HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR RAH ROW ...

Page 15

KM48V8004B, KM48V8104B HYPER PAGE READ-MODIFY-WRITE CYCLE RAS CRP CAS RAD t ASR t ASC ROW A ADDR ...

Page 16

KM48V8004B, KM48V8104B HYPER PAGE READ AND WRITE MIXED CYCLE RAS CAS t RAD RAH t ASR ROW A ADDR ...

Page 17

KM48V8004B, KM48V8104B RAS - ONLY REFRESH CYCLE* NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ASR ...

Page 18

KM48V8004B, KM48V8104B HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS ...

Page 19

KM48V8004B, KM48V8104B HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS ...

Page 20

KM48V8004B, KM48V8104B CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS DQ0 ~ DQ3(7) t CEZ V - ...

Page 21

KM48V8004B, KM48V8104B PACKAGE DIMENSION 32 SOJ 400mil #32 #1 0.0375 (0.95) 0.050 (1.27) 32 TSOP(II) 400mil 0.037 (0.95) 0.050 (1.27) 0.841 (21.36) MAX 0.820 (20.84) 0.830 (21.08) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) ...

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