KM416C4104CS-6 Samsung, KM416C4104CS-6 Datasheet
KM416C4104CS-6
Related parts for KM416C4104CS-6
KM416C4104CS-6 Summary of contents
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... Refresh cycle(4K Ref Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • ...
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KM416C4004C, KM416C4104C PIN CONFIGURATION (Top Views) • KM416C40(1)04CS DQ0 DQ15 3 48 DQ1 DQ14 4 47 DQ2 DQ13 5 46 DQ3 DQ12 DQ4 DQ11 ...
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KM416C4004C, KM416C4104C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM ...
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KM416C4004C, KM416C4104C DC AND OPERATING CHARACTERISTICS Symbol Power Speed I Don t care CC1 I Normal Don t care CC2 I Don t care CC3 I Don t care CC4 I Normal Don t care CC5 I Don t care ...
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KM416C4004C, KM416C4104C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V ...
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KM416C4004C, KM416C4104C AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address W delay time CAS set-up time (CAS ...
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KM416C4004C, KM416C4104C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
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KM416C4004C, KM416C4104C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. V (min) and V (max) are reference levels for measuring timing ...
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KM416C4004C, KM416C4104C t is specified from W falling edge to the earlier CAS rising edge. 16. CWL t 17. is referenced to the earlier CAS falling edge before RAS transition low. CSR 18 referenced to the later CAS ...
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KM416C4004C, KM416C4104C WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS V - ...
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KM416C4004C, KM416C4104C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR V ...
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KM416C4004C, KM416C4104C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR V ...
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KM416C4004C, KM416C4104C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416C4004C, KM416C4104C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416C4004C, KM416C4104C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416C4004C, KM416C4104C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416C4004C, KM416C4104C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V ...
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KM416C4004C, KM416C4104C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V ...
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KM416C4004C, KM416C4104C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4004C, KM416C4104C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4004C, KM416C4104C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH V ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS RAD t t ASR RAH V - ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS V - ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS ...
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KM416C4004C, KM416C4104C HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS ...
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KM416C4004C, KM416C4104C HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS t RCD LCAS t RAD RAH t t ASR ASC ...
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KM416C4004C, KM416C4104C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP ...
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KM416C4004C, KM416C4104C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ROW A ...
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KM416C4004C, KM416C4104C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416C4004C, KM416C4104C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS ...
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KM416C4004C, KM416C4104C PACKAGE DIMENSION 50 TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.034 (0.875) MAX 0.047 (1.20) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.010 (0.25) ...