KM416C1200BJ-6 Samsung, KM416C1200BJ-6 Datasheet

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KM416C1200BJ-6

Manufacturer Part Number
KM416C1200BJ-6
Description
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns
Manufacturer
Samsung
Datasheet

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Part Number:
KM416C1200BJ-6
Manufacturer:
SAMSUNG
Quantity:
14 575
Part Number:
KM416C1200BJ-6
Manufacturer:
SAMSUNG
Quantity:
14 575
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
¡Ü
¡Ü
¡Ü
¡Ü
Speed
Active Power Dissipation
Refresh Cycles
Perfomance Range
Part Identification
C1000B
V1000B
C1200B
V1200B
- KM416C1000B/B-L (5V, 4K Ref.)
- KM416C1200B/B-L (5V, 1K Ref.)
- KM416V1000B/B-L (3.3V, 4K Ref.)
- KM416V1200B/B-L (3.3V, 1K Ref.)
Speed
-5
-6
-7
Part
NO.
-5
-6
-7
50ns
60ns
70ns
t
RAC
3.3V
3.3V
V
5V
5V
396
360
324
4K
CC
15ns
15ns
20ns
t
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
CAC
3.3V
Refresh
cycle
4K
1K
576
540
504
1K
110ns
130ns
90ns
t
RC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Normal
64ms
16ms
Refresh period
35ns
40ns
45ns
605
550
495
4K
t
PC
5V
Unit : mW
Remark
5V/3.3V
5V/3.3V
5V/3.3V
128ms
L-ver
880
825
770
1K
DESCRIPTION
(A0 - A9)
(A0 - A9)
A0-A11
A0 - A7
Note)
UCAS
LCAS
RAS
W
*1
*1
*1
: 1K Refresh
FUNCTIONAL BLOCK DIAGRAM
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
¡Ü
Fast Page Mode operation
Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
2 CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Single +5V ¡¾ 10% power supply (5V product)
Single +3.3V ¡¾ 0.3V power supply (3.3V product)
400mil packages
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
1,048,576 x16
Row Decoder
Memory Array
Cells
CMOS DRAM
Vcc
Vss
Data out
Data out
Data in
Data in
Lower
Buffer
Lower
Buffer
Upper
Buffer
Upper
Buffer
OE
DQ15
DQ0
DQ7
DQ8
to
to

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KM416C1200BJ-6 Summary of contents

Page 1

... RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ...

Page 2

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B KM416C/V10(2)00BJ ¡Ü DQ0 DQ1 DQ2 DQ3 V CC DQ4 DQ5 DQ6 DQ7 N.C N.C W RAS *A11(N.C) *A10(N. *A10 and A11 are N.C for KM416C/V1200B(5V/3.3V, 1K Ref. product) ...

Page 3

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE ...

Page 4

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B DC AND OPERATING CHARACTERISTICS Symbol Power I Don't care CC1 Normal I Don't care CC2 L I Don't care CC3 I Don't care CC4 Normal I Don't care CC5 L I Don't care CC6 I L ...

Page 5

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CAPACITANCE =25 ¡É Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] (0 ¡É¡Â CHARACTERISTICS =5.0V ¡¾ 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Test ...

Page 6

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column ...

Page 7

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B NOTES An initial pause of 200us is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is 1. achieved. Input voltage levels are Vih/Vil Transition times are measured ...

Page 8

KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B t t 10. , are referenced to the earlier CAS rising edge. ASC CAH t 11. is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the ...

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