AM29F800BT-55SI Advanced Micro Devices, AM29F800BT-55SI Datasheet
AM29F800BT-55SI
Specifications of AM29F800BT-55SI
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AM29F800BT-55SI Summary of contents
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PRELIMINARY Am29F800B 8 Megabit ( 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements Manufactured ...
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GENERAL DESCRIPTION The Am29F800B Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) ...
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PRODUCT SELECTOR GUIDE Family Part Number V = 5.0 V ± Speed Option V = 5.0 V ± 10% CC Max access time ACC Max CE# access time Max OE# access ...
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CONNECTION DIAGRAMS A15 1 A14 2 3 A13 A12 4 A11 5 A10 WE# 11 RESET RY/BY# 15 A18 16 A17 ...
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CONNECTION DIAGRAMS RY/BY# A18 A17 CE# V OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 PIN CONFIGURATION A0–A18 = 19 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data input/output, ...
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... Am29F800BT-55, EC, EI, FC, FI, SC, SI Am29F800BB-55 Am29F800BT-70, Am29F800BB-70 Am29F800BT-90, EC, EI, EE, Am29F800BB-90 FC, FI, FE, Am29F800BT-120, SC, SI, SE Am29F800BB-120 Am29F800BT-150, Am29F800BB-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (– ...
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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...
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After the system writes the autoselect command se- quence, the device enters the autoselect mode. The system can then read autoselect codes from the inter- nal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings ...
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... Table 2. Am29F800BT Top Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...
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Table 3. Am29F800BB Bottom Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...
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Table 4. Am29F800B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F800B Byte L (Top Boot Block) Device ID: Word L Am29F800B Byte L (Bottom Boot Block) Sector Protection Verification L L ...
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Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the Command Defi- nitions table). In addition, the following hardware data protection measures prevent accidental erasure or pro- ...
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Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is ...
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The Chip Erase command se- quence should be reinitiated once the device has returned to reading array data, to ensure data integrity. The system can determine the status of ...
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The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. ...
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Table 5. Am29F800B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector ...
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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and ...
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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...
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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, de- termining the ...
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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate ...
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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...
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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Note 1) V Active Write Current CC I CC2 (Notes 2 ...
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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Read Current CC1 CC V Active Write Current CC I CC2 (Notes 1 and 2) ...
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TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalents. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted ...
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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...
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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...
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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...
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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...
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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device ...
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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid Address for reading ...
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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...
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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-suspended sector. Temporary Sector ...
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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...
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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...
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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time (Note 2) Byte Programming Time Word Programming Time Byte Mode Chip Programming Time (Note 2) Word Mode Notes: 1. Typical program and erase times assume the following conditions: 25 ...
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PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 13.50 ...
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PHYSICAL DIMENSIONS (continued) TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM ...
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REVISION SUMMARY FOR AM29F800B Revision B Global Added -55 speed option. Changed data sheet designa- tion from Advance Information to Preliminary. Sector Protection/Unprotection Corrected text to indicate that these functions can only be implemented using programming equipment. Table 1, Device ...
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... Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...