PHB95N03LT Philips Semiconductors, PHB95N03LT Datasheet
PHB95N03LT
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PHB95N03LT Summary of contents
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... N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ Product availability: PHP95N03LT in SOT78 (TO-220AB) PHB95N03LT in SOT404 (D PHE95N03LT in SOT226 (I 2. Features Low on-state resistance Fast switching. 3. Applications High frequency computer motherboard converters ...
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... Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... Philips Semiconductors 120 P der 110 (%) 100 100 P tot ---------------------- P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. ...
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... Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting th(j-mb) base R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance 10 Z th(j-sp) (K/ 0.5 0.2 0 0.05 0. single pulse Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. ...
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... Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R drain-source on-state resistance DSon Dynamic characteristics g forward transconductance fs Q total gate charge ...
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... Philips Semiconductors 3 ( 0.4 0.8 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 0.06 2 DSon ( ) 0.05 0.04 0.03 0.02 0. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 07814 Product specifi ...
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... Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature > DSon ( º 175 º and 175 ...
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... Philips Semiconductors ( 175 º 0.3 0 and 175 Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 07814 Product specification 03ad82 ( ºC ...
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... Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 Fig 15. SOT78 (TO-220AB). 9397 750 07814 Product specifi ...
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... Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 2- Fig 16. SOT404 (D PAK) 9397 750 07814 Product specification 2 ...
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... Philips Semiconductors Plastic single-ended package; low-profile 3 lead TO-220AB DIMENSIONS (mm are the original dimensions UNIT A b 4.5 1.40 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT226 2 Fig 17. SOT226 (I -PAK) 9397 750 07814 Product specification E mounting ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010202 - Product specification; initial version 9397 750 07814 Product specification PHP95N03LT series Rev. 01 — 02 February 2001 N-channel TrenchMOS transistor © Philips Electronics N.V. 2001. All rights reserved ...
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... Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
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... Korea: Tel. + 1412, Fax. + 1415 Malaysia: Tel. + 5214, Fax. + 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 9397 750 07814 Product specifi ...
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... Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 Limiting values Thermal characteristics 7.1 Transient thermal impedance . . . . . . . . . . . . . . 4 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Disclaimers © Philips Electronics N.V. 2001. ...