CXK77V3211Q-14 Sony, CXK77V3211Q-14 Datasheet

no-image

CXK77V3211Q-14

Manufacturer Part Number
CXK77V3211Q-14
Description
32768-word by 32-bit High Speed Synchronous StaticRAM
Manufacturer
Sony
Datasheet
For the availability of this product, please contact the sales office.
Description
synchronous SRAM with a 2-bit burst counter and
output register. All synchronous inputs pass through
register controlled by a positive-edge-triggered
single clock input (CLK). The synchronous inputs
include all addresses, all data inputs, chip enable
(CE), two additional chip enables for easy depth
expansion (CE2, CE2), burst control inputs (ADSC,
ADSP, ADV), four individual byte write enables
(BW1, BW2, BW3, BW4), one byte write enable
(BWE), and global write enable (SGW).
(OE) and power down control (ZZ). Two mode
control pins (LBO, FT) define four different operation
modes: Linear/Interleaved burst sequence and
Flow-Thru/Pipelined operations.
as controlled by BW1 through BW4 and BWE or
SGW. The output register is included on-chip and
controlled by clock, it can be activated by connecting
FT to high for high speed pipeline operation.
status
controller (ADSC) input pins. Subsequent burst
addresses can be internally generated as controlled
by the burst advance pin (ADV). Burst order
sequence can be controlled by connecting LBO to
high for Interleaved burst order (i486/Pentium™) or
by connecting LBO to low for Linear burst order.
simplify WRITE cycles. This allows self-timed
WRITE cycles. Individual byte enables allow
individual bytes to be written. WRITE pass through
makes written data immediately available at the
output register during READ cycle following a
WRITE as controlled by OE.
supply and all inputs and outputs are LVTTL
compatible. The device is ideally suited for i486 and
Pentium™ systems and those systems which
benefit from a very wide data bus.
i486/Pentium is a trademark of Intel Corp.
The CXK77V3211Q is a 32K
Asynchronous inputs include the output enable
WRITE cycles can be from one to four bytes wide
Burst operation can be initiated with either address
Address and write control are registered on-chip to
The CXK77V3211Q operates from a +3.3V power
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
32768-word by 32-bit High Speed Synchronous Static RAM
processor
(ADSP)
or
32 high performance
address
CXK77V3211Q
status
– 1 –
Structure
Features
• Fast address access times and High frequency
• 5V tolerant inputs except I/O pins
• A FT pin for pipelined or flow-thru architecture
• A LBO mode pin as burst control pin
• Single +3.3V
• Common data inputs and data outputs
• All inputs and outputs are LVTTL compatible
• Four Individual BYTE WRITE enables, GLOBAL
• Three Chip Enables for simple depth expansion
• One cycle output disable for both pipelined and
• Internal input registers for address, data and
• Self-timed WRITE cycle
• Write pass through capability
• High 30pF output drive capability at rated access
• A ZZ pin for powerdown
• 100-lead QFP package for high density, high
Symbol
Silicon gate CMOS IC
operation
(i486/Pentium™ and Linear burst sequence)
WRITE and BYTE WRITE ENABLE
flow-thru operation
control signals
time
speed operation
-12
-14
Access
12ns
14ns
Flow-through
+10%
– 5%
100 pin QFP (Plastic)
power supply
60MHz
50MHz
Cycle
Access
7ns
8ns
Pipeline
-12/14
E95721-PS
75MHz
66MHz
Cycle

Related parts for CXK77V3211Q-14

CXK77V3211Q-14 Summary of contents

Page 1

... READ cycle following a WRITE as controlled by OE. The CXK77V3211Q operates from a +3.3V power supply and all inputs and outputs are LVTTL compatible. The device is ideally suited for i486 and Pentium™ systems and those systems which benefit from a very wide data bus ...

Page 2

... CXK77V3211Q ...

Page 3

... DQ30 25 Vssq DQ31 DQ32 – 3 – CXK77V3211Q DQ16 78 DQ15 Vssq 75 DQ14 74 DQ13 73 DQ12 72 DQ11 71 Vssq ...

Page 4

... Linear Burst: This active high input selects interleaved burst sequence. LBO I ZZ: This active high input enables the device in powerdown mode Supply Power Supply: +3.3V DD Ground: GND V Supply SS Isolated Output Buffer Supply: +3. Supply DD Isolated Output Buffer Ground: GND V q Supply SS Description +10% – 5% +10% – 5% – 4 – CXK77V3211Q ...

Page 5

... All L Register A (n – new cycle All – new cycle All HIGH-Z No new cycle One – 1) for one byte – 5 – CXK77V3211Q Address used latched A1 latched A0 latched A1 latched A0 latched A1 latched A0 Next cycle ...

Page 6

... Tsolder 235 · 10 Symbol Min. Typ. V 3.135 3 2.0 — –0.3 — IL (GND 2.0V for t ≤ t /2. KC /2. KC – 6 – CXK77V3211Q BW2 BW3 BW4 Unit °C °C °C · sec ( +70°C, GND = 0V) Max ...

Page 7

... All inputs ≤ 0.2V or ≥ V – 0.2V DD Device deselect I = –5.0mA 5.0mA < 1µA > 10KΩ < 1µA > 10KΩ – 7 – CXK77V3211Q +10% , GND = 0V +70°C) – 5% Min. Max. –1 1 – ≥ — 210 250 — 20 — ...

Page 8

... OLZ 2 0 — OHZ 2 — 5 — t 2.5 — 2 0.5 — 0 ZZS 3 5 — ZZH 3 1 — — 20 ZZR – 8 – CXK77V3211Q -14 Unit 14 ns — ns — ns — — ns — ns — ns — ns — — — ns — ns — ...

Page 9

... Output load (2) for and OHZ (Ta = 25° 1MHz) Test condition Typ I/O +10 +70°C) – and HZ OLZ – 9 – Max. Unit 30pF 1.4V T Output load (1) Fig. 1. +3.3V 295 I/O 5pF 217 Output load (2) Fig. 2. CXK77V3211Q ...

Page 10

... Next Next Next Next Current Current Current Current Current Current – 10 – CXK77V3211Q ADSC ADV BWx OE CLK ...

Page 11

... S H ADV suspends burst t OHZ OLZ t KQX Q Q (A1) Q (A2) ( – 11 – CXK77V3211Q A3 Burst continued with new base address Deselect cycle ( ( (A2 Burst wrap around to its initial state. Burst READ DON'T CARE UNDEFINED A4 ) ...

Page 12

... ADV must be HIGH to permit a WRITE to the loaded address (A2 Burst WRITE – 12 – ADSC extends burst ADV suspends burst (A3 Extended Burst WRITE DON'T CARE UNDEFINED CXK77V3211Q D ( ...

Page 13

... CE2 and CE2 have timing identical to CE. On this diagram, when CE is LOW, CE2 is LOW and CE2 is HIGH. When CE is HIGH, CE2 is HIGH and CE2 is LOW OLZ D (A2 OHZ KQ Q (A1) Q (A2) Pass Through READ Single WRITE – 13 – CXK77V3211Q ( ) (A3 Burst READ DON'T CARE UNDEFINED ...

Page 14

... HIGH. When CE is HIGH, CE2 is HIGH and CE is LOW OHZ OLZ t KOX Q Q (A1) Q (A2) ( – 14 – A3 ADV suspends burst ( (A2 Burst wrap around to its initial state. Burst READ DON'T CARE UNDEFINED CXK77V3211Q (A3) ...

Page 15

... ADV must be HIGH to permit a WRITE to the loaded address (A2 Burst WRITE – 15 – CXK77V3211Q ADSC extends burst ADV suspends burst (A3) ( ...

Page 16

... CE2 and CE2 have timing identical to CE. On this diagram, when CE is LOW, CE2 is LOW and CE2 is HIGH. When CE is HIGH, CE2 is HIGH and CE2 is LOW OLZ D (A2) t OHZ (A3) Single WRITE – 16 – CXK77V3211Q ( ) ( ( ( Burst READ DON'T CARE UNDEFINED ...

Page 17

... ZZ Timing t KC CLK ADSP ADSC ZZH ZZS t Snooze – 17 – CXK77V3211Q ZZR ...

Page 18

... EIAJ CODE JEDEC CODE 100PIN QFP (PLASTIC) 1420 23.2 ± 0.2 20.0 ± 0 0.65 0.12 M 0.25 + 0.15 0.1 0.1 0.1 – 0.05 0° to 10° DETAIL A PACKAGE STRUCTURE PACKAGE MATERIAL LEAD TREATMENT QFP-100P-L02 QFP100-P-1420-B LEAD MATERIAL PACKAGE WEIGHT – 18 – CXK77V3211Q 0.35 2.75 – 0.15 + 0.08 0.32 – 0.07 (0.3) DETAIL B EPOXY RESIN SOLDER PLATING COPPER 1.7g ...

Related keywords