D3N06 Freescale Semiconductor, Inc, D3N06 Datasheet

D3N06

Manufacturer Part Number

D3N06

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.D3N06.pdf (10 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Advance Information

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

which utilize Motorola’s High Cell Density TMOS process. These

miniature surface mount MOSFETs feature low R DS(on) and true

logic level performance. Dual HDTMOS devices are designed for

use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters,

and power management in portable and battery powered products

such as computers, printers, cellular and cordless phones. They

can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives.

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

MAXIMUM RATINGS

DEVICE MARKING

Motorola TMOS Power MOSFET Transistor Device Data

Drain–to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T A = 25 C

Source Current — Continuous @ T A = 25 C

Total Power Dissipation @ T A = 25 C (1)

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C

Thermal Resistance — Junction–to–Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds

D3N06

MMDF3N06HDR2

Dual HDTMOS are an advanced series of power MOSFETs

Motorola, Inc. 1997

Low R DS(on) Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

I DSS Specified at Elevated Temperature

Mounting Information for SO–8 Package Provided

(V DD = 60 Vdc, V GS = 5.0 Vdc, V DS = 32 Vdc, I L = 15 Apk, L = 10 mH, R G = 25 )

Device

(T J = 25 C unless otherwise noted)

Reel Size

ORDERING INFORMATION

12 mm embossed tape

Tape Width

Rating

2500 units

Quantity

™

Symbol

T J , T stg

V DSS

R JA

Source–1

Source–2

MMDF3N06HD

V GS

E AS

I DM

P D

T L

I D

I S

Gate–1

Gate–2

CASE 751–05, Style 11

R DS(on) = 100 m

Motorola Preferred Device

POWER MOSFET

DUAL TMOS

60 VOLTS

– 55 to 150

Order this document

by MMDF3N06HD/D

Top View

SO–8

Value

16.5

62.5

105

260

3.3

1.7

2.0

Drain–1

Drain–2

Watts

Unit

Vdc

Adc

Apk

Adc

C/W

Related parts for D3N06

D3N06 Summary of contents

Page 1

... Single Pulse Drain–to–Source Avalanche Energy — Starting Vdc 5.0 Vdc Vdc Apk mH Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds DEVICE MARKING D3N06 ORDERING INFORMATION Device Reel Size MMDF3N06HDR2 ...

Page 2

MMDF3N06HD ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 0.25 mAdc) Zero Gate Voltage Drain Current ( Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 6 3.3 V 3.1 V 6.0 V 3.5 V 5.0 4.5 V 3.7 V 2.9 V 4.3 V 3.9 V 4.0 4.1 V 3.0 2.7 V 2.0 2.5 V 1.0 2.3 V ...

Page 4

MMDF3N06HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by ...

Page 5

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case ...

Page 6

MMDF3N06HD 100 SINGLE PULSE 25°C 10 1.0 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Biased Safe Operating ...

Page 7

INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 8

MMDF3N06HD For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control ...

Page 9

G –T– SEATING PLANE D 8X 0.25 (0.010 Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 751–05 SO–8 ISSUE P MMDF3N06HD NOTES: 1. ...

Page 10

MMDF3N06HD Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out ...

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