D6N03 Freescale Semiconductor, Inc, D6N03 Datasheet

D6N03

Manufacturer Part Number

D6N03

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.D6N03.pdf (10 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Designer's

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

MOSFETs which utilize Motorola’s High Cell Density TMOS

process. These miniature surface mount MOSFETs feature low

R DS(on) and true logic level performance. Dual HDTMOS devices

are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applica-

tions are dc–dc converters, and power management in portable

and battery powered products such as computers, printers, cellular

and cordless phones. They can also be used for low voltage motor

controls in mass storage products such as disk drives and tape

drives.

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

MAXIMUM RATINGS

DEVICE MARKING

Motorola TMOS Power MOSFET Transistor Device Data

Drain–to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T A = 25 C

Drain Current

Source Current — Continuous @ T A = 25 C

Total Power Dissipation @ T A = 25 C (1)

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C

Thermal Resistance — Junction–to–Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 sec.

D6N03

MMDF6N03HDR2

Dual HDTMOS devices are an advanced series of power

Motorola, Inc. 1997

Low R DS(on) Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

I DSS Specified at Elevated Temperature

Mounting Information for SO–8 Package Provided

(V DD = 30 Vdc, V GS = 5.0 Vdc, V DS = 20 Vdc, I L = 9.0 Apk, L = 10 mH, R G = 25

Device

— Single Pulse (t p

(T J = 25 C unless otherwise noted)

Reel Size

ORDERING INFORMATION

Data Sheet

10 s)

12 mm embossed tape

Tape Width

Rating

Quantity

2500

)

Symbol

T J , T stg

Source–1

Source–2

V DSS

MMDF6N03HD

R JA

V GS

E AS

I DM

Gate–1

Gate–2

P D

T L

I D

I S

CASE 751–05, Style 11

Motorola Preferred Device

POWER MOSFET

R DS(on) = 35 m

DUAL TMOS

30 VOLTS

– 55 to 150

Order this document

by MMDF6N03HD/D

Top View

SO–8

Value

62.5

325

260

6.0

1.7

2.0

Drain–1

Drain–2

Watts

Unit

Vdc

Adc

Apk

Adc

C/W

Related parts for D6N03

D6N03 Summary of contents

Page 1

... Vdc 5.0 Vdc Vdc 9.0 Apk mH Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 sec. DEVICE MARKING D6N03 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. ORDERING INFORMATION Device ...

Page 2

MMDF6N03HD ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 0.25 mAdc) Zero Gate Voltage Drain Current ( Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 3.9 V 3 4.5 V 4.3 V 8.0 4.1 V 6.0 4 0.2 0.4 0.6 0.8 1.0 1 DRAIN–TO–SOURCE ...

Page 4

MMDF6N03HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are deter- mined by how fast the FET input capacitance can be charged by current ...

Page 5

QT 10 9.0 8.0 7 6.0 5.0 4.0 3.0 2.0 1 2.0 4.0 6.0 8 TOTAL GATE CHARGE (nC) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total ...

Page 6

MMDF6N03HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E– Figure 15. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data W W 0.0106 0.0431 CHIP ...

Page 8

MMDF6N03HD INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 10

MMDF6N03HD 0. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation ...

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