TC55W800FT-55 TOSHIBA Semiconductor CORPORATION, TC55W800FT-55 Datasheet
TC55W800FT-55
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TC55W800FT-55 Summary of contents
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... I/O5 I/O13 I/O6 I/O14 I/O7 DD TC55W800FT-55,-70 TC55W800FT - Access Time A0~A18 Address Inputs (Word Mode) A-1~A18 Address Inputs (Byte Mode CE2 Chip Enable 1 R/W Read/Write Control OE Output Enable Data Byte Control ...
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... I/O13 I/O14 I/O15 I/O16 R CE2 CONTROL BYTE CIRCUIT MEMORY CELL ARRAY 2,048 ´ 256 ´ 16 (8,388,608) SENSE AMP COLUMN ADDRESS DECODER COLUMN ADDRESS REGISTER COLUMN ADDRESS BUFFER CLOCK GENERATOR A A10 TC55W800FT-55,- GND CE A16 A11 2001-10-03 2/13 ...
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... High High High-Z RATING 40° to 85°C PARAMETER = 2.3 V~3 2.7 V~3 TC55W800FT-55,-70 I/O9~I/O15 I/O16 High-Z A-1 Output Output Output Output High-Z High-Z High-Z A-1 Input Input Input Input High-Z High-Z High-Z A-1 High-Z High-Z High-Z High-Z High-Z High-Z ...
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... DD or CE2 = 0 1.5 V~3 3.0 V BYTE = 0.2 V, these limits are assured for the condition CE2 ³ TEST CONDITION = GND GND V OUT TC55W800FT-55,-70 MIN TYP MAX ¾ ¾ ±1.0 -0.5 ¾ ¾ 2 ¾ ¾ ±1.0 ¾ ¾ ¾ ...
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... OEW t Data Setup Time DS t Data Hold Time DH AC TEST CONDITIONS PARAMETER Output load Input pulse level Timing measurements Reference level PARAMETER PARAMETER TC55W800FT-55,-70 TC55W800FT UNIT -55 -70 MIN MAX MIN MAX ¾ ¾ ¾ ¾ ¾ ¾ ...
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... OEW t Data Setup Time DS t Data Hold Time DH AC TEST CONDITIONS PARAMETER Output load Input pulse level Timing measurements Reference level PARAMETER PARAMETER TC55W800FT-55,-70 TC55W800FT UNIT -55 -70 MIN MAX MIN MAX ¾ ¾ ¾ ¾ ¾ ¾ ...
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... BYTE FUNCTION SYMBOL t BYTE Setup Time BS t BYTE Recovery Time BR TIMING DIAGRAMS BYTE CE2 CE 1 BYTE PARAMETER TC55W800FT-55,-70 MIN MAX UNIT ¾ ¾ 2001-10-03 7/13 ...
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... CO1 t CO2 OEE t COE INDETERMINATE (See Note ODW (See Note 2) (See Note 5) TC55W800FT-55,- ODO t BD VALID DATA OUT OEW Hi-Z (See Note VALID DATA IN (See Note 5) 2001-10-03 8/13 Hi-Z ...
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... I/O1~8 (Byte Mode) (See Note ODW Hi-Z t COE (See Note 5) (See Note ODW Hi-Z t COE (See Note 5) TC55W800FT-55,- Hi VALID DATA Hi VALID DATA IN 2001-10-03 9/13 ...
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... HIGH during the write cycle, the outputs will remain at high impedance. (5) Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. (See Note 4) CONTROLLED ODW Hi-Z t COE (See Note 5) TC55W800FT-55,- Hi VALID DATA IN 2001-10-03 10/13 ...
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... -40~85°C (See Note (See Note 1) DATA RETENTION MODE (See Note 2) t CDR - 0 (See Note 3) DATA RETENTION MODE t CDR 0.2 V level, the operating current is given TC55W800FT-55,-70 ) MIN TYP MAX ¾ 1.5 3.3 ¾ ¾ 10 ¾ ¾ 1 ¾ ¾ 5 ¾ ¾ 0 ¾ ...
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... PACKAGE DIMENSIONS Weight: 0.52 g (typ) TC55W800FT-55,-70 2001-10-03 12/13 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. TC55W800FT-55,-70 000707EBA 2001-10-03 13/13 ...
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