TC55VCM216ASTN55 TOSHIBA Semiconductor CORPORATION, TC55VCM216ASTN55 Datasheet
TC55VCM216ASTN55
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TC55VCM216ASTN55 Summary of contents
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TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate ...
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BLOCK DIAGRAM A10 A11 A12 A13 A14 A15 A17 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 CE 1 CE2 LB UB R/W OE MEMORY CELL ARRAY ...
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OPERATING MODE MODE CE2 Read Write Output Deselect Standby * * * = don't care H = logic high ...
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V DC CHARACTERISTICS SYMBOL PARAMETER Input Leakage Current I Output High Current Output Low Current V OL Output Leakage ...
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AC CHARACTERISTICS AND OPERATING CONDITIONS ( − − − − 40° to 85° 2 READ CYCLE SYMBOL t Read Cycle Time RC t Address Access Time ACC ...
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AC CHARACTERISTICS AND OPERATING CONDITIONS ( − − − − 40° to 85° 2 READ CYCLE SYMBOL t Read Cycle Time RC t Address Access Time ACC ...
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AC TEST CONDITIONS PARAMETER Input pulse level Timing measurements Reference level Output load Fig.1 : Input rise and fall time V Typ DD 90% 10% GND 1 V/ TC55VCM216ASTN40,55 TEST CONDITION 0.2 V, ...
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TIMING DIAGRAMS (See Note 1) READ CYCLE Address A0~A17 CE 1 CE2 OUT Hi-Z I/O1~16 WRITE CYCLE 1 (R/W CONTROLLED) Address A0~A17 R CE2 OUT I/O1~ I/O1~16 ...
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WRITE CYCLE 2 ( CE1 CONTROLLED) Address A0~A17 CE2 OUT Hi-Z I/O1~ (See Note 5) I/O1~16 WRITE CYCLE 3 (CE2 CONTROLLED) Address A0~A17 CE2 ...
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WRITE CYCLE Address A0~A17 R CE2 OUT I/O1~ I/O1~16 Note: (1) R/W remains HIGH for the read cycle. (2) If CE1 ( goes ...
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DATA RETENTION CHARACTERISTICS ( SYMBOL V Data Retention Supply Voltage DH I Standby Current DDS2 t Chip Deselect to Data Retention Mode Time CDR t Recovery Time R CE1 CONTROLLED DATA RETENTION MODE 2 ...
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Note: (1) In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0 CE2 ≥ V − 0 (2) When CE1 is operating at the V transition of V from 2.3(2.7) ...
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PACKAGE DIMENSIONS TSOPⅠ48-P-1214-0. Weight:0.35 g (typ 12.4 0.1 14.0 0.2 TC55VCM216ASTN40,55 Unit:mm 1.0 0.1 0.1 0.05 1.2max 0.5 0.1 2002-07-04 13/14 ...
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RESTRICTIONS ON PRODUCT USE • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...