KFG5616U1A-PIB5 Samsung, KFG5616U1A-PIB5 Datasheet

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... OneNAND256(KFG5616x1A-xxB5) Density Part No. KFG5616Q1A-DEB5 KFG5616Q1A-PEB5 KFG5616D1A-DEB5 256Mb KFG5616D1A-PEB5 KFG5616U1A-DIB5 KFG5616U1A-PIB5 OneNAND TM Specification V (core & IO) Temperature CC 1.8V(1.7V~1.95V) Extended 1.8V(1.7V~1.95V) Extended 2.65V(2.4V~2.9V) Extended 2.65V(2.4V~2.9V) Extended 3.3V(2.7V~3.6V) Industrial 3.3V(2.7V~3.6V) Industrial Version: Ver. 1.1 Date: Aug 12, 2005 1 FLASH MEMORY PKG 67FBGA(LF) 48TSOP1 67FBGA(LF) 48TSOP1 67FBGA(LF) 48TSOP1 ...

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... Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND ‚ trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their rightful owners. ...

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OneNAND256(KFG5616x1A-xxB5) 1.1 Revision History Document Title OneNAND Revision History Revision No. History 0.0 1. Initial Issue 1.0 1. Corrected the errata 2. Added Data Protection flow chart. 3. Removed Cache Read Operation. 4. Added additional information on command register. 5. ...

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... Samsung offers a variety of Flash solutions including NAND Flash, OneNAND both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. To determine which Samsung Flash product solution is best for your application, refer the product selector chart. Application Requires Fast Random Read ...

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... The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. ...

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OneNAND256(KFG5616x1A-xxB5) 1.5 Product Features Device Architecture Design Technology: Supply Voltage: Host Interface: 3KB Internal BufferRAM: SLC NAND Array: Device Performance Host Interface Type: Programmable Burst Read Latency Multiple Sector Read: Multiple Reset Modes: Multi Block Erase Low Power Dissipation: System ...

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OneNAND256(KFG5616x1A-xxB5) 1.6 General Overview OneNAND ‚ monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control logic, a NAND Flash array, and 3KB of internal BufferRAM. The BufferRAM reserves 1KB for ...

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OneNAND256(KFG5616x1A-xxB5) 2.0 DEVICE DESCRIPTION 2.1 Detailed Product Description The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for ...

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OneNAND256(KFG5616x1A-xxB5) 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated ECC Written ECC BufferRAM BootRAM DataRAM Sector Possible data unit to be read from memory to BufferRAM programmed to memory. Data unit Byte, ...

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OneNAND256(KFG5616x1A-xxB5) 2.3 Pin Configuration 2.3.1 48TSOP1 N.C 1 A15 2 A14 3 A13 4 A12 5 A11 6 A10 INT 13 AVD ...

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OneNAND256(KFG5616x1A-xxB5) 2.3.2 67ball FBGA 67ball, 7mm x 9mm x max 1.0mmt , 0.8mm ball pitch FBGA DQ14 DQ13 DQ12 DQ8 DQ1 OE DQ9 ...

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OneNAND256(KFG5616x1A-xxB5) 2.4 Pin Description Pin Name Type Host Interface Address Inputs A15~ Inputs for addresses during read and write operation, which are for addressing BufferRAM & Register. Data Inputs/Outputs - Inputs data during program and commands for all ...

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OneNAND256(KFG5616x1A-xxB5) 2.5 Block Diagram DQ15~DQ0 A15~A0 CLK AVD INT RDY 2.6 Memory Array Organization The OneNAND architecture integrates several memory areas on a single chip. 2.6.1 Internal (NAND Array) Memory Organization The on-chip internal memory is ...

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OneNAND256(KFG5616x1A-xxB5) Internal Memory Array Information Area Main Spare Internal Memory Array Organization Main Area Main Area 512B Sector0 Main Area 1KB Page0 1KB Page63 Block Page 64KB 1KB 2KB 32B Sector 512B Page 512B Sector1 16B Sector0 1KB Block 64KB ...

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OneNAND256(KFG5616x1A-xxB5) 2.6.2 External (BufferRAM) Memory Organization The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering. The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it ...

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OneNAND256(KFG5616x1A-xxB5) External Memory Array Organization BootRAM DataRAM0 DataRAM1 FLASH MEMORY Spare area data Main area data (16B) (512B) BootRAM 0 BootRAM 1 DataRAM 0_0 DataRAM 0_1 DataRAM 1_0 DataRAM 1_1 16 Sector: (512 + 16) Byte ...

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OneNAND256(KFG5616x1A-xxB5) 2.7 Memory Map The following tables are the memory maps for the OneNAND. 2.7.1 Internal (NAND Array) Memory Organization The following tables show the Internal Memory address map in word order. Page and Sector Block Block Address Address Block0 ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block64 0040h 0000h~00FDh Block65 0041h 0000h~00FDh Block66 0042h 0000h~00FDh Block67 0043h 0000h~00FDh Block68 0044h 0000h~00FDh Block69 0045h 0000h~00FDh Block70 0046h 0000h~00FDh Block71 0047h 0000h~00FDh Block72 0048h 0000h~00FDh Block73 0049h 0000h~00FDh Block74 004Ah ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block128 0080h 0000h~00FDh Block129 0081h 0000h~00FDh Block130 0082h 0000h~00FDh Block131 0083h 0000h~00FDh Block132 0084h 0000h~00FDh Block133 0085h 0000h~00FDh Block134 0086h 0000h~00FDh Block135 0087h 0000h~00FDh Block136 0088h 0000h~00FDh Block137 0089h 0000h~00FDh Block138 008Ah ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block192 00C0h 0000h~00FDh Block193 00C1h 0000h~00FDh Block194 00C2h 0000h~00FDh Block195 00C3h 0000h~00FDh Block196 00C4h 0000h~00FDh Block197 00C5h 0000h~00FDh Block198 00C6h 0000h~00FDh Block199 00C7h 0000h~00FDh Block200 00C8h 0000h~00FDh Block201 00C9h 0000h~00FDh Block202 00CAh ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block256 0100h 0000h~00FDh Block257 0101h 0000h~00FDh Block258 0102h 0000h~00FDh Block259 0103h 0000h~00FDh Block260 0104h 0000h~00FDh Block261 0105h 0000h~00FDh Block262 0106h 0000h~00FDh Block263 0107h 0000h~00FDh Block264 0108h 0000h~00FDh Block265 0109h 0000h~00FDh Block266 010Ah ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block320 0140h 0000h~00FDh Block321 0141h 0000h~00FDh Block322 0142h 0000h~00FDh Block323 0143h 0000h~00FDh Block324 0144h 0000h~00FDh Block325 0145h 0000h~00FDh Block326 0146h 0000h~00FDh Block327 0147h 0000h~00FDh Block328 0148h 0000h~00FDh Block329 0149h 0000h~00FDh Block330 014Ah ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block384 0180h 0000h~00FDh Block385 0181h 0000h~00FDh Block386 0182h 0000h~00FDh Block387 0183h 0000h~00FDh Block388 0184h 0000h~00FDh Block389 0185h 0000h~00FDh Block390 0186h 0000h~00FDh Block391 0187h 0000h~00FDh Block392 0188h 0000h~00FDh Block393 0189h 0000h~00FDh Block394 018Ah ...

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OneNAND256(KFG5616x1A-xxB5) Page and Sector Block Block Address Address Block448 01C0h 0000h~00FDh Block449 01C1h 0000h~00FDh Block450 01C2h 0000h~00FDh Block451 01C3h 0000h~00FDh Block452 01C4h 0000h~00FDh Block453 01C5h 0000h~00FDh Block454 01C6h 0000h~00FDh Block455 01C7h 0000h~00FDh Block456 01C8h 0000h~00FDh Block457 01C9h 0000h~00FDh Block458 01CAh ...

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OneNAND256(KFG5616x1A-xxB5) 2.7.2 Internal Memory Spare Area Assignment The figure below shows the assignment of the spare area in the Internal Memory NAND Array. Main area 256W Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3 LSB MSB LSB MSB LSB MSB ...

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OneNAND256(KFG5616x1A-xxB5) 2.7.3 External Memory (BufferRAM) Address Map The following table shows the External Memory address map in Word and Byte Order. Note that the data output is unknown while host reads a register bit of reserved area. Address Address Division ...

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OneNAND256(KFG5616x1A-xxB5) 2.7.4 External Memory Map Detail Information The tables below show Word Order Address Map information for the BootRAM and DataRAM main and spare areas. BootRAM(Main area) -0000h~01FFh: 2(sector) x 512byte(NAND main area) = 1KB 0000h~00FFh(512B) BootM 0 (sector 0 ...

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OneNAND256(KFG5616x1A-xxB5) 2.7.5 External Memory Spare Area Assignment Word Byte Buf. F Address Address BootS 0 8000h 10000h 8001h 10002h 8002h 10004h 8003h 10006h 8004h 10008h ECC Code for Main area data (2 8005h 1000Ah ECC Code for Spare area data ...

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OneNAND256(KFG5616x1A-xxB5) Word Byte Buf. F Address Address DataS 1_0 8020h 10040h 8021h 10042h 8022h 10044h 8023h 10046h 8024h 10048h ECC Code for Main area data (2 8025h 1004Ah ECC Code for Spare area data (1 8026h 1004Ch 8027h 1004Eh DataS ...

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OneNAND256(KFG5616x1A-xxB5) 2.8 Registers Section 2.8 of this specification provides information about the OneNAND registers. 2.8.1 Register Address Map This map describes the register addresses, register name, register description, and host accessibility. Address Address (word order) (byte order) F000h 1E000h F001h ...

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... FF01h 1FE02h FF02h 1FE04h FF03h 1FE06h FF04h 1FE08h FF05h~FFFFh 1FE0Ah~1FFFEh 2.8.2 Manufacturer ID Register F000h (R) This Read register describes the manufacturer's identification. Samsung Electronics Company manufacturer 00ECh. F000h, default = 00ECh Host Name Access Reserved R/W Reserved for user Write Protection ...

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... Device Identification DeviceID [1:0] Vcc DeviceID [2] Muxed/Demuxed DeviceID [3] Single/DPP DeviceID [7:4] Density 0000 = 128Mb, 0001 = 256Mb, 0010 = 512Mb, 0011 = 1Gb, 0100 = 2Gb, 0101=4Gb DeviceID [8] Top/Bottom Boot Device ID Default Device KFG5616Q1A KFG5616D1A KFG5616U1A DeviceID Description 00 = 1.8V 2.65V/3.3V, 10/11 = reserved 0 = Muxed Demuxed 0 = Single DDP ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.4 Version ID Register F002h This register is reserved for manufacturer 2.8.5 Data Buffer Size Register F003h (R) This Read register describes the size of the Data Buffer. F003h, default = 0400h Data Buffer ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.7 Number of Buffers Register F005h (R) This Read register describes the number of each Buffer. F005h, default = 0201h DataBufAmount Number of Buffers Information Register Information DataBufAmount BootBufAmount 2.8.8 Technology Register F006h (R) ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.9 Start Address1 Register F100h (R/W) This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased. F100h, default = 0000h Reserved(0000000) Device 256Mb Start Address1 Information Register Information ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.11 Start Address3 Register F102h (R/W) This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. F102h, default = 0000h Reserved(0000000) Device 256Mb Start Address3 Information Register Information ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.13 Start Address5 Register F104h This register is reserved for future use. 2.8.14 Start Address6 Register F105h This register is reserved for future use. 2.8.15 Start Address7 Register F106h This register is reserved for future use. 2.8.16 Start Address8 ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.17 Start Buffer Register F200h (R/W) This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA). The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back programmed. ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.18 Command Register F220h (R/W) This Read/Write register describes the operation of the OneNAND interface. Note that all command should be issued when INT is turned to busy from ready state, by writing 0 to INT register. After any ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.19 System Configuration 1 Register F221h (R, R/W) This Read/Write register describes the system configuration. F221h, default = 40C0h R/W R/W R/W RM BRL Read Mode (RM Read Mode Information[15] Item ...

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OneNAND256(KFG5616x1A-xxB5) Burst Length (BL) BL 000 001 010 011 100 101~111 Burst Length (BL) Information[11:9] Item BL Error Correction Code (ECC) Information[8] Item ECC RDY Polarity (RDYpol) Information[7] Item RDYpol INT Polarity (INTpol) Information[6] INTpol 0 1 (default) Burst Length(Main) ...

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OneNAND256(KFG5616x1A-xxB5) I/O Buffer Enable (IOBE) IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid after IOBE is set to "1". IOBE can be ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.20 System Configuration 2 Register F222h This register is reserved for future use. 2.8.21 Controller Status Register F240h (R) This Read register shows the overall internal status of the OneNAND and the controller. F240h, default = 0000h 15 14 ...

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OneNAND256(KFG5616x1A-xxB5) Program This bit shows the Program Operation status. Program Information[12] Item Prog Program Operation status Erase This bit shows the Erase Operation status. Erase Information[11] Item Erase Erase Operation status Error This bit shows the overall Error status, including ...

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OneNAND256(KFG5616x1A-xxB5) Reset / Busy (RSTB) This bit shows the Reset Operation status. RSTB Information[7] Item RSTB OTP Lock Status (OTP ) L This bit shows whether the OTP block is locked or unlocked. Locking the OTP has the effect of ...

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OneNAND256(KFG5616x1A-xxB5) Controller Status Register Output Modes Mode [15] [14] [13] OnGo Lock Load Load Ongoing 1 0 Program Ongoing 1 0 Erase Ongoing 1 0 Reset Ongoing 1 0 Multi-Block Erase 1 0 Ongoing Erase Verify Read 1 0 Ongoing ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.22 Interrupt Status Register F241h (R/W) This Read/Write register shows status of the OneNAND interrupts. F241h, defaults = 8080h after Cold Reset; 8010h after Warm/Hot Reset INT Reserved(0000000) Interrupt (INT) This is the master ...

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OneNAND256(KFG5616x1A-xxB5) Erase Interrupt (EI) This is the Erase interrupt bit. EI Interrupt [5] Status Conditions At the completion of an Erase Operation sets itself to ’1’ (0094h, 0095h, 0030h) ’0’ is written to this bit, or clears to ’0’ Cold/Warm/Hot ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.24 End Block Address Register F24Dh This register is reserved for future use. 2.8.25 NAND Flash Write Protection Status Register F24Eh (R) This Read register shows the Write Protection Status of the NAND Flash memory array. To read the ...

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OneNAND256(KFG5616x1A-xxB5) ECC Information[7:0] Item Definition 1st selected sector of ERm0 the main BufferRAM 2nd selected sector of ERm1 the main BufferRAM 1st selected sector of ERs0 the spare BufferRAM 2nd selected sector of ERs1 the spare BufferRAM 2.8.27 ECC Result ...

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OneNAND256(KFG5616x1A-xxB5) 2.8.29 ECC Result of 2 Register FF03h (R) This Read register shows the Error Correction result for the 2nd selected sector of the main area data. ECCposWord1 is the error position address in the Main Area data of 256 ...

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OneNAND256(KFG5616x1A-xxB5) 3.0 DEVICE OPERATION This section of the datasheet discusses the operation of the OneNAND device followed by AC/DC Characteristics and Timing Diagrams which may be consulted for further information. The OneNAND supports a limited command-based interface in ...

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OneNAND256(KFG5616x1A-xxB5) 3.1.1 Reading Data From Buffer The buffer memory can be read by addressing a Read to the desired buffer area. 3.1.2 Writing Data to Buffer The buffer memory can be written to by addressing a Write to a desired ...

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OneNAND256(KFG5616x1A-xxB5) 3.2 Device Bus Operation The device bus operations are shown in the table below. Operation CE Standby H Warm Reset X Asynchronous Write L Asynchronous Read L Load Initial Burst Read L Burst Read L Terminate Burst Read H ...

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OneNAND256(KFG5616x1A-xxB5) 3.3 Reset Mode Operation The One NAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Core Reset. Section 3.3 discusses the operation of these reset modes. The Register Reset Table shows the which registers are affected by the ...

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OneNAND256(KFG5616x1A-xxB5) 3.3.1 Cold Reset Mode Operation See Timing Diagram 6.9 At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset signal. This triggers bootcode loading. Bootcode loading means that ...

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OneNAND256(KFG5616x1A-xxB5) 3.4 Write Protection Operation The OneNAND can be write-protected to prevent re-programming or erasure of data. The areas of write-protection are the BootRAM, and the NAND Flash Array. 3.4.1 BootRAM Write Protection Operation At system power-up, voltage detector in ...

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OneNAND256(KFG5616x1A-xxB5) 3.4.3.1 Unlocked NAND Array Write Protection State An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using the appropriate software command. (locked-tight state can be achieved via ...

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OneNAND256(KFG5616x1A-xxB5) 3.4.3.3 Locked-tight NAND Array Write Protection State A block that locked-tight state can only be changed to lock state after a Cold or Warm Reset. Unlock and Lock command sequences will not affect its state. This ...

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... OneNAND256(KFG5616x1A-xxB5) Data Protection Operation Flow Diagram Note) Samsung strongly recommend to follow the above flow chart Start Write ’SBA’ of Flash Add: F24Ch DQ=SBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’lock/unlock/lock-tight’ Command Add: F220h DQ=002Ah/0023h/002Ch Wait for INT register ...

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OneNAND256(KFG5616x1A-xxB5) 3.5 Data Protection During Power Down Operation See Timing Diagram 6.13 The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below POR level, about 1.3V. ...

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OneNAND256(KFG5616x1A-xxB5) 3.7 Read Operation See Timing Diagrams 6.1, 6.2, 6.3 and 6.4 The device has two read modes; Asynchronous Read and Synchronous Burst Read. The initial state machine automatically sets the device into the Asynchronous Read Mode (RM=0) to prevent ...

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OneNAND256(KFG5616x1A-xxB5) 3.7.2.1 Continuous Linear Burst Read Operation See Timing Diagram 6.2 First Clock Cycle The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to ...

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OneNAND256(KFG5616x1A-xxB5) 3.7.2.3 Programmable Burst Read Latency Operation See Timing Diagrams 6.1 and 6.2 Upon power up, the number of initial clock cycles from Valid Address (AVD) to initial data defaults to four clocks. The number of clock cycles (n) which ...

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OneNAND256(KFG5616x1A-xxB5) 3.7.4 Output Disable Mode Operation When the input output from the device is disabled. IH The outputs are placed in the high impedance state. 3.8 Program Operation The Program operation is used ...

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OneNAND256(KFG5616x1A-xxB5) Program Operation Flow Diagram Start 2) Write Data into DataRAM ADD: DP DQ=Data-in Data Input Completed? YES Write ’FBA’ of Flash Add: F100h DQ=FBA Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Write ’BSA, BSC’ of DataRAM Add: ...

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OneNAND256(KFG5616x1A-xxB5) 3.9 Copy-Back Program Operation The Copy-Back program is configured to quickly rewrite data stored in one page without utilizing memory other than OneNAND. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is ...

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OneNAND256(KFG5616x1A-xxB5) The Copy-Back steps shown in the flow chart are: Data is read from the NAND Array using Flash Block Address (FBA), Flash Page Address (FPA) and Flash Sector Address (FSA). FBA, FPA, and FSA identify the source address to ...

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OneNAND256(KFG5616x1A-xxB5) 3.9.1 Copy-Back Program Operation with Random Data Input See Timing Diagram 6.7 The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data and program into designated page. Data from ...

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OneNAND256(KFG5616x1A-xxB5) 3.10 Erase Operation There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase. 3.10.1 Block Erase Operation See Timing Diagram 6.8 The device can be erased one block at a time. To erase ...

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OneNAND256(KFG5616x1A-xxB5) In order to perform the Internal Erase Routine, the following command sequence is necessary. The Host sets the block address of the memory location. The Erase Command initiates the Internal Erase Routine. During the execution of the Routine, the ...

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OneNAND256(KFG5616x1A-xxB5) 3.10.3 Multi-Block Erase Verify Read Operation After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined with address of each block failed address is identified, it must be managed ...

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OneNAND256(KFG5616x1A-xxB5) 3.10.4 Erase Suspend / Erase Resume Operation The Erase Suspend/Erase Resume Commands interrupt and restart a Block Erase or Multi-Block Erase operation so that user may perform another urgent operation on the block that is not being designated by ...

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OneNAND256(KFG5616x1A-xxB5) Erase Resume When the Erase Resume command is executed, the Block Erase will restart. The Erase Resume operation does not actually resume the erase, but starts it again from the beginning. When an Erase Suspend or Erase Resume command ...

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OneNAND256(KFG5616x1A-xxB5) OTP Area Structure Sector(main area):512B One Block: 64pages 64KB+2KB Page:1KB+32B Sector(spare area):16B Manufacturer Area : 44pages page 20~ page 63 User Area : 20pages page 0~ page 19 75 FLASH MEMORY ...

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OneNAND256(KFG5616x1A-xxB5) 3.11.1 OTP Load Operation An OTP Load Operation accesses the OTP area and transfers identified content from the OTP to the DataRAM on-chip buffer, thus making the OTP contents available to the Host. The OTP area is a separate ...

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OneNAND256(KFG5616x1A-xxB5) 3.11.2 OTP Program Operation An OTP Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated page(s) of the OTP. A memory location in the OTP area can be programmed only one ...

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OneNAND256(KFG5616x1A-xxB5) OTP Program Operation Flow Chart Start 1) Write ’FBA’ of Flash Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’OTP Access’ Command Add: F220h DQ=0065h Wait for INT register low to high transition Add: F241h ...

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OneNAND256(KFG5616x1A-xxB5) 3.11.3 OTP Lock Operation Even though the OTP area can only be programmed once without erase capability, it can be locked when the device starts up to prevent any changes from being made. Unlike the main area of the ...

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OneNAND256(KFG5616x1A-xxB5) OTP Lock Operation Flow Chart Start 1) Write ’FBA’ of Flash Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’OTP Access’ Command Add: F220h DQ=0065h Wait for INT register low to high transition Add: F241h ...

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OneNAND256(KFG5616x1A-xxB5) 3.12 Dual Operations The device has independent dual data buffers on-chip (except during the Boot Load period) that enables higher performance read and program operation. 3.12.1 Read-While-Load Operation This operation accelerates the read performance of the device by enabling ...

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OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY 82 ...

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OneNAND256(KFG5616x1A-xxB5) FLASH MEMORY 83 ...

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OneNAND256(KFG5616x1A-xxB5) 3.13 ECC Operation The OneNAND device has on-chip ECC with the capability of detecting 2 bit errors and correcting 1-bit errors in the NAND Flash Array memory main and spare areas. As the device transfers data from a BufferRAM ...

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... Invalid blocks are identified by erasing all address locations in the NAND Flash Array memory except locations where the invalid block(s) information is written prior to shipping. An invalid block(s) status is defined by the 1st word in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFFFh data at the 1st word of sector0. ...

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OneNAND256(KFG5616x1A-xxB5) Invalid Block Table Creation Flow Chart Increment Block Address Create (or update) Invalid Block(s) Table 3.14.2 Invalid Block Replacement Operation Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification ...

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OneNAND256(KFG5616x1A-xxB5) Referring to the diagram for further illustration, when an error happens in the nth page of block 'A' during program operation, copy the data in the 1st ~ (n-1)th page to the same location of block 'B' via data ...

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OneNAND256(KFG5616x1A-xxB5) 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings Parameter Voltage on any pin relative Temperature Under Bias Storage Temperature Short Circuit Output Current Recommended Operating Temperature NOTES: 1. Minimum DC voltage is -0.5V on Input/ Output pins. ...

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OneNAND256(KFG5616x1A-xxB5) 4.3 DC Characteristics Parameter Symbol Test Conditions Input Leakage Current OUT Output Leakage Current OE=V Active Asynchronous I CE=V , OE=V CC1 IL Read Current (Note 2) ...

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OneNAND256(KFG5616x1A-xxB5) 5.0 AC CHARACTERISTICS 5.1 AC Test Conditions Parameter Input Pulse Levels CLK Input Rise and Fall Times other inputs Input and Output Timing Levels Output Load V CC Input & Output Test Point 0V Input Pulse ...

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OneNAND256(KFG5616x1A-xxB5) 5.4 AC Characteristics for Synchronous Burst Read See Timing Diagrams 6.1, 6.2 Parameter Clock Clock Cycle Initial Access Time Burst Access Time Valid Clock to Output Delay AVD Setup Time to CLK AVD Hold Time from CLK Address Setup ...

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OneNAND256(KFG5616x1A-xxB5) 5.5 AC Characteristics for Asynchronous Read See Timing Diagrams 6.3, 6.4, 6.5 and 6.6 Parameter Access Time from CE Low Asynchronous Access Time from AVD Low Asynchronous Access Time from address valid Read Cycle Time AVD Low Time Address ...

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OneNAND256(KFG5616x1A-xxB5) 5.7 AC Characteristics for Asynchronous Write/Load/ Program/Erase Operation See Timing Diagrams 6.7, 6.8 and 6.9 Parameter WE Cycle Time AVD low pulse width Address Setup Time Address Hold Time Data Setup Time Data Hold Time CE Setup Time CE ...

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OneNAND256(KFG5616x1A-xxB5) 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst Mode with Wrap Around See AC Characteristics Table 5.4 5 cycles for initial access shown. BRL CLK CES CE t CER CLK t AVDS t RDYO AVD t AVDH t ...

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OneNAND256(KFG5616x1A-xxB5) 6.3 Asynchronous Read See AC Characteristics Table 5 CLK CE AVD OE WE DQ0-DQ15 A0-A15 Hi-Z RDY NOTE: VA=Valid Read Address, RD=Read Data. 6.4 Asynchronous Read See AC Characteristics Table 5 CLK CE AVD OE ...

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OneNAND256(KFG5616x1A-xxB5) 6.5 Asynchronous Read See AC Characteristics Table 5 CLK CE AVD DQ0-DQ15 A0-A15 Hi-Z RDY NOTE: VA=Valid Read Address, RD=Read Data. 6.6 Asynchronous Read See AC Characteristics Table 5 CLK CE OE ...

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OneNAND256(KFG5616x1A-xxB5) 6.7 Asynchronous Write See AC Characteristics Table 5 CLK WPL A0-A15 VA t AWES DQ0-DQ15 Hi-Z RDY NOTE: VA=Valid Read Address, WD=Write Data ...

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OneNAND256(KFG5616x1A-xxB5) 6.8 Load Operation Timing See AC Characteristics Tables 5.7 and 5 AWES A0:A15 AA DQ0-DQ15 LMA WPL CLK INT NOTES Address of address register CA ...

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OneNAND256(KFG5616x1A-xxB5) 6.9 Program Operation Timing See AC Characteristics Tables 5.7 and 5.8 Program Command Sequence (last two cycles AWES AH A0:A15 AA DQ0-DQ15 PMA ...

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OneNAND256(KFG5616x1A-xxB5) 6.10 Block Erase Operation Timing See AC Characteristics Tables 5.7 and 5.8 Erase Command Sequence (last two cycles AWES AH A0:A15 AA DQ0-DQ15 EMA ...

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OneNAND256(KFG5616x1A-xxB5) 6.11 Cold Reset Timing POR triggering level System Power OneNAND Sleep Operation ...

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OneNAND256(KFG5616x1A-xxB5) 6.12 Warm Reset Timing See AC Characteristics Tables 5.6 CE Ready1 High-Z RDY INT Operation 1) Idle Reset Ongoing Status NOTES: 1. The status which can accept any register based operation(Load, Program, Erase command, ...

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OneNAND256(KFG5616x1A-xxB5) 6.13 Hot Reset Timing AVD BP(Note 3) A0~A15 or F220h DQ0~DQ15 INT bit High-Z RDY OneNAND Operation or Idle Operation NOTE: 1. Internal reset operation means that the device initializes internal registers and makes output signals ...

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OneNAND256(KFG5616x1A-xxB5) 6.14 NAND Flash Core Reset Timing AVD F220h A0~A15 DQ0~DQ15 INT bit High-Z RDY OneNAND Operation or Idle Operation 6.15 Data Protection Timing During Power Down The device is designed to offer protection from any involuntary ...

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... TECHNICAL AND APPLICATION NOTES From time-to-time supplemental technical information and application notes pertaining to the design and operation of the device in a system are included in this section. Contact your Samsung Representative to determine if additional notes are available. 7.1 Methods of Determining Interrupt Status There are two methods of determining Interrupt Status on the OneNAND. Using the INT pin or monitoring the Interrupt Status Regis- ter Bit ...

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OneNAND256(KFG5616x1A-xxB5) Synchronous Mode Using the INT Pin When operating synchronously, INT is tied directly to a Host GPIO. Asynchronous Mode Using the INT Pin When configured to operate in an asynchronous mode, CE and AVD of the OneNAND are tied ...

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OneNAND256(KFG5616x1A-xxB5) Synchronous Mode Using Interrupt Status Register Bit Polling When operating synchronously, CE, AVD, CLK, RDY, OE, and DQ pins on the host and OneNAND are tied together. Asynchronous Mode Using Interrupt Status Register Bit Polling When configured to operate ...

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OneNAND256(KFG5616x1A-xxB5) 7.1.3 Determining Rp Value Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts. Ready Vcc KFG5616x1A @ Vcc = 1.8V, T 1.75 Ibusy 0.18 0.7727 0.089 x x tr[us] ...

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OneNAND256(KFG5616x1A-xxB5) Ready Vss KFG5616x1A @ Vcc = 1.8V, T 1.75 Ibusy 0.18 0.586 0.067 tf[us] 6.49 6.49 tr[ns] 10K 1K INT pol = ’Low’ Vcc and Vccq INT Rp ~50k ohm tf tr Vcc V Busy ...

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OneNAND256(KFG5616x1A-xxB5) 7.2 Boot Sequence One of the best features OneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader despite the fact that its core architecture is based on NAND Flash. ...

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OneNAND256(KFG5616x1A-xxB5) Block 512 Reservoir Reservoir File System File System Block 162 Block 162 ...

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OneNAND256(KFG5616x1A-xxB5) 8.0 PACKAGE DIMENSIONS 67-FBGA-7.00x9.00 7.00 ±0.10 #A1 TOP VIEW 0.80x7=5.60 0.10 MAX 0.80 (Datum (Datum 0.32 ±0.05 0.90 ±0.10 BOTTOM VIEW 67- 0.45 ±0.05 0. ...

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OneNAND256(KFG5616x1A-xxB5) 48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE( TSOP1 - 1220F #1 #24 0~8 0.45~0.75 0.018~0.030 20.00 0.20 0.787 0.008 #48 #25 18.40 0.10 0.724 0.004 ( 256Mb product (KFG5616x1A) 113 FLASH MEMORY Unit :mm/Inch 1.00 ...