HY57V658020BTC-8 Hynix Semiconductor, HY57V658020BTC-8 Datasheet
HY57V658020BTC-8
Related parts for HY57V658020BTC-8
HY57V658020BTC-8 Summary of contents
Page 1
... Data mask function by DQM • Internal four banks operation ORDERING INFORMATION Part No. Clock Frequency HY57V658020BTC-75 HY57V658020BTC-8 HY57V658020BTC-10P HY57V658020BTC-10S HY57V658020BTC-10 HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-10 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described ...
Page 2
PIN CONFIGURATION PIN DESCRIPTION PIN PIN NAME CLK Clock CKE Clock Enable CS Chip Select BA0, BA1 Bank Address A0 ~ A11 Address Row Address Strobe, RAS, CAS, WE Column Address Strobe, Write Enable DQM Data Input/Output Mask DQ0 ~ ...
Page 3
FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 8 I/O Synchronous DRAM Self refresh logic & timer CLK Row active CKE CS RAS CAS refresh WE Column Active DQM Bank Select A0 Address Registers A1 A11 BA0 BA1 Mode Registers Rev. ...
Page 4
ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative Voltage on V relative Short Circuit Output Current Power Dissipation Soldering Temperature Time Note : Operation at above absolute maximum ...
Page 5
CAPACITANCE (TA=25 C, f=1MHz) Parameter Input capacitance CLK A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE, DQM Data input / output capacitance DQ0 ~ DQ7 OUTPUT LOAD CIRCUIT Output DC Output Load Circuit DC CHARACTERISTICS I Parameter Symbol ...
Page 6
... I DD6 Note : 1.I and I depend on output loading and cycle rates. Specified values are measured with the output open DD1 DD4 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V658020BTC-75/8/10P/10S/10 4.HY57V658020BLTC-75/8/10P/10S/10 Rev. 1.6/Nov. 01 (TA =3.3 0.3V, V =0V Test Condition Burst length=1, One bank active ...
Page 7
AC CHARACTERISTICS I Parameter Symbol CAS Latency = 3 tCK3 System clock cycle time CAS Latency = 2 tCK2 Clock high pulse width tCHW Clock low pulse width tCLW CAS Latency = 3 tAC3 Access time from clock CAS Latency ...
Page 8
AC CHARACTERISTICS II Parameter Symbol t Operation RC RAS Cycle Time t Auto Refresh RRC t RAS to CAS Delay RCD t RAS Active Time RAS t RAS Precharge Time RP t RAS to RAS Bank Active Delay RRD t ...
Page 9
IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage (Min) (Max) (V) I(mA) I(mA) 3.45 -2.4 3.3 -27.3 3.0 0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197 1.8 -67.3 -226.2 1.65 -73 -248 1.5 -77.9 -269.7 1.4 ...
Page 10
DEVICE OPERATING OPTION TABLE HY57V658020B(L)TC-75 CAS Latency 133MHz(7.5ns) 3CLKs 125MHz(8ns) 3CLKs 100MHz(10ns) 2CLKs HY57V658020B(L)TC-8 CAS Latency 125MHz(8ns) 3CLKs 100MHz(10ns) 2CLKs 83MHz(12ns) 2CLKs HY57V658020B(L)TC-10P CAS Latency 100MHz(10ns) 2CLKs 83MHz(12ns) 2CLKs 66MHz(15ns) 2CLKs HY57V658020B(L)TC-10S CAS Latency 100MHz(10ns) 3CLKs 83MHz(12ns) 2CLKs 66MHz(15ns) 2CLKs ...
Page 11
COMMAND TRUTH TABLE Command Mode Register Set No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Burst Stop DQM Auto Refresh Burst-READ-Single-WRITE Entry 1 Self Refresh Exit Entry Precharge power down ...
Page 12
PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 0.400(0.016) 0.80(0.0315)BSC 0.300(0.012) Rev. 1.6/Nov. 01 UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 10.262(0.4040) 10.058(0.3960) 5deg 0.210(0.0083) 0.597(0.0235) 0deg 0.406(0.0160) 0.120(0.0047) HY57V658020B 1.194(0.0470) 0.991(0.0390) 12 ...