SUM110N06-3M4L Vishay Semiconductors, SUM110N06-3M4L Datasheet
SUM110N06-3M4L
Specifications of SUM110N06-3M4L
Available stocks
Related parts for SUM110N06-3M4L
SUM110N06-3M4L Summary of contents
Page 1
... 0.0041 4 TO-263 Top View Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation ...
Page 2
... SUM110N06-3m4L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... ° °C 125 ° 100 SUM110N06-3m4L Vishay Siliconix 250 200 150 100 T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.006 0.005 0.004 ...
Page 4
... SUM110N06-3m4L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 I ( 100 ( 150 ° 0 0.001 t (s) in Avalanche Current vs. Time www ...
Page 5
... Document Number: 73036 S-80272-Rev. B, 11-Feb-08 1000 100 10 1 0.1 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N06-3m4L Vishay Siliconix Limited by r DS(on °C C Single Pulse 0 Drain-to-Source Voltage ( minimum V at which r ...
Page 6
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...