W27C512P-70 Winbond, W27C512P-70 Datasheet
W27C512P-70
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W27C512P-70 Summary of contents
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ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 provides an electrical chip erase function. FEATURES High speed access time: 45/70/90/120 nS (max.) Read ...
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FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27C512 has two control functions, both of which produce data at the outputs for power control and chip select. OE/V to the output pins. When addresses are stable, the address ...
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Standby Mode The standby mode significantly reduces V mode, all outputs are in a high impedance state, independent Two-line Output Control Since EPROMs are often used in large memory arrays, the W27C512 provides two control inputs for ...
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DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Operation Temperature Storage Temperature Voltage on all Pins with Respect to Ground Except OE/V A9 and V Pins CC Voltage on OE/V Pin with Respect to Ground PP Voltage on A9 Pin with Respect ...
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CAPACITANCE ( MHz PARAMETER Input Capacitance Output Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output ...
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READ OPERATION DC CHARACTERISTICS (V = 5.0V 5 PARAMETER SYM. Input Load Current I LI Output Leakage Current I LO Standby V Current (TTL input) Standby V Current I ...
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DC Programming Characteristics, continued PARAMETER Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Silicon I.D. Voltage V Program Voltage PP V Supply Voltage (Program PROGRAMMING/ERASE CHARACTERISTICS (V = 5.0V 5%, T ...
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TIMING WAVEFORMS AC Read Waveform V IH Address OE/Vpp V IL High Z Outputs Erase Waveform Read Read Company Device SID SID A9 = 12.0V Others = ...
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Timing Waveforms, continued Programming Waveform V IH Address Stable Address Data Data In Stable 12.0V OE/Vpp OES PRT T PWP ...
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SMART PROGRAMMING ALGORITHM 1 No Increment Address Increment Address No Last Address? Yes Start Address = First Location Vcc = 5.0V OE/Vpp = 12V Program One 100 S Pulse Last Address? Yes Address = First Location Pass ...
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SMART PROGRAMMING ALGORITHM 2 Increment Address Start Address = First Location Vcc = 5. Program One 100 S Pulse OE/V = 12V PP Increment X Yes X = 25? No Fail Verify One Byte OE ...
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SMART ERASE ALGORITHM Increment Address Start Vcc = 5V OE/Vpp = 14V A9 = 14V Chip Erase 100 mS Pulse Address = First Location Increment X Vcc = 3.75V OE/Vpp = V IL ...
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... W27C512-70 70 W27C512-90 90 W27C512-12 120 W27C512P-45 45 W27C512P-70 70 W27C512P-90 90 W27C512P-12 120 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...
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PACKAGE DIMENSIONS 28-pin P-DIP 32-pin PLCC Seating Plane 1 G ...
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... TEL: 852-27513100 FAX: 852-27552064 - 15 - W27C512 DESCRIPTION ) from 2.0 (min) to 2.2 (max) IH and Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 Publication Release Date: November 1999 Revision A4 ...