W27E010P-70 Winbond, W27E010P-70 Datasheet

no-image

W27E010P-70

Manufacturer Part Number
W27E010P-70
Description
128K*8 bits high speed, low power electrically erasable EPROM
Manufacturer
Winbond
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W27E010P-70
Quantity:
6 100
Part Number:
W27E010P-70
Manufacturer:
WINBOND
Quantity:
6 100
Part Number:
W27E010P-70
Manufacturer:
Winbond
Quantity:
5 510
Part Number:
W27E010P-70
Manufacturer:
WINBOND
Quantity:
36
Part Number:
W27E010P-70
Manufacturer:
WINBOND
Quantity:
8 000
Part Number:
W27E010P-70
Manufacturer:
XILINX
0
Company:
Part Number:
W27E010P-70
Quantity:
22
GENERAL DESCRIPTION
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 131072
provides an electrical chip erase function.
FEATURES
PIN CONFIGURATIONS
High speed access time:
45/55/70/90/120 nS (max.)
Read operating current: 30 mA (typ.)
Erase/Programming operating current:
1 mA (typ.)
Standby current: 5 A (typ.)
Single 5V power supply
Q0
A6
A5
A4
A3
A2
A1
A0
A7
GND
Vpp
A15
A12
A16
A1
Q0
Q2
A0
Q1
A7
A6
A5
A4
A3
A2
128K
11
5
6
7
8
9
10
12
13
1
4
Q
1
A
1
2
4 3 2 1
1
8
9
10
11
12
13
14
15
16
2
3
4
5
6
7
A
1
5
32-pin PLCC
1
5
Q
2
A
1
6
1
6
G
N
D
V
p
p
1
7
Q
3
1
8
V
c
c
3
2
Q
4
8 ELECTRICALLY ERASABLE EPROM
/
P
G
M
1
9
Q
5
3
1
23
22
21
19
17
32
31
30
29
28
27
26
25
24
20
18
N
C
2
0
Q
6
3
0
29
28
27
26
25
24
23
22
21
A9
A10
PGM
NC
A14
A13
A8
A11
OE
CE
Q7
Q6
Q5
Q4
Q3
8 bits that operates on a single 5 volt power supply. The W27E010
Vcc
CE
A14
A13
A8
A9
A11
OE
A10
Q7
- 1 -
BLOCK DIAGRAM
PIN DESCRIPTION
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 32-pin 600 mil DIP,
450 mil SOP and PLCC
SYMBOL
A0 A16
Q0 Q7
PGM
GND
V
V
OE
CE
NC
CC
PP
PGM
GND
A16
OE
V
CE
V
A0
CC
PP
.
.
CONTROL
DECODER
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
Publication Release Date: June 2000
DESCRIPTION
OUTPUT
BUFFER
CORE
ARRAY
W27E010
Revision A6
Q0
Q7
.
.

Related parts for W27E010P-70

W27E010P-70 Summary of contents

Page 1

ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 provides an electrical chip erase function. FEATURES High speed access time: 45/55/70/90/120 nS (max.) Read ...

Page 2

FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E010 has two control functions, both of which produce data at the outputs for power control and chip select. OE controls the output buffer to gate data to the output ...

Page 3

Standby Mode The standby mode significantly reduces V standby mode, all outputs are in a high impedance state, independent of OE and PGM . Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E010 provides two ...

Page 4

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all Pins with Respect to Ground Except V and A9 Pins Voltage on V Pin with Respect to Ground CC Voltage on V Pin with ...

Page 5

CAPACITANCE ( MHz PARAMETER Input Capacitance Output Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output ...

Page 6

READ OPERATION DC CHARACTERISTICS (Vcc = 5.0V 10%) PARAMETER SYM. Input Load Current I LI Output Leakage Current I LO Standby V Current (TTL input) Standby V Current (CMOS input) V Operating Current I ...

Page 7

DC PROGRAMMING CHARACTERISTICS (V = 5.0V 10 PARAMETER Input Load Current V Program Current CC V Program Current PP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage ...

Page 8

TIMING WAVEFORMS AC Read Waveform V IH Address High Z Outputs Erase Waveform Read Manufacturer SID Others = Address ...

Page 9

Timing Waveforms, Continued Programming Waveform V IH Address V IL Data 12. 5. PGM V IL Program Program Verify Address Stable Address Stable T DFP T ...

Page 10

SMART PROGRAMMING ALGORITHM Increment Address Start Address = First Location Vcc = 5V Vpp = 12V Program One 100 S Pulse Increment X Yes X = 25? No Fail Verify One Byte Pass No Last Address? Yes ...

Page 11

SMART ERASE ALGORITHM No Increment Address Start Vcc = 5V Vpp = 14V A9 = 14V Chip Erase 100 mS Pulse Address = First Location Increment X Fail Erase Verify Pass Last Address? ...

Page 12

... W27E010S-90 90 W27E010S-12 120 W27E010P-45 45 W27E010P-55 55 W27E010P-70 70 W27E010P-90 90 W27E010P-12 120 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

Page 13

PACKAGE DIMENSIONS 32-pin P-DIP 32-pin SO Wide Body Seating Plane Base Plane Seating Plane ...

Page 14

Package Dimensions, Continued 32-Lead PLCC Seating Plane ...

Page 15

... PAGE DESCRIPTION 5 Modify Input Pulse Levels in AC Test Conditions Winbond Electronics (H.K.) Ltd. Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Memory Lab. Unit 9-15, 22F, Millennium City, Unit 9-15, 22F, Millennium City, No. 378 Kwun Tong Rd; ...

Related keywords