MCM69F618CTQ8.5 Freescale Semiconductor, Inc, MCM69F618CTQ8.5 Datasheet

MCM69F618CTQ8.5

Manufacturer Part Number

MCM69F618CTQ8.5

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MCM69F618CTQ8.5.pdf (12 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

64K x 18 Bit Flow–Through

BurstRAM Synchronous

Fast Static RAM

vide a burstable, high performance, secondary cache for the 68K Family,

PowerPC , 486, i960 , and Pentium microprocessors. It is organized as 64K

words of 18 bits each. This device integrates input registers, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced parts

count in cache data RAM applications. Synchronous design allows precise cycle

control with the use of an external clock (K). BiCMOS circuitry reduces the overall

power consumption of the integrated functions for greater reliability.

enable (G) and Linear Burst Order (LBO) are clock (K) controlled through

positive–edge–triggered noninverting registers.

addresses can be generated internally by the MCM69F618C (burst sequence

operates in linear or interleaved mode dependent upon the state of LBO) and

controlled by the burst address advance (ADV) input pin.

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

chronous write enable SW are provided to allow writes to either individual bytes

or to both bytes. The two bytes are designated as “a” and “b”. SBa controls DQa

and SBb controls DQb. Individual bytes are written if the selected byte writes SBx

are asserted with SW. Both bytes are written if either SGW is asserted or if all SBx

and SW are asserted.

from the memory array.

outputs are LVTTL compatible and 5 V tolerant.

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

i960 and Pentium are trademarks of Intel Corp.

REV 2

2/18/98

MOTOROLA FAST SRAM

Motorola, Inc. 1998

The MCM69F618C is a 1M–bit synchronous fast static RAM designed to pro-

Addresses (SA), data inputs (DQx), and all control signals except output

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

Write cycles are internally self–timed and initiated by the rising edge of the

Synchronous byte write (SBx), synchronous global write (SGW), and syn-

For read cycles, a flow–through SRAM allows output data to simply flow freely

The MCM69F618C operates from a 3.3 V power supply and all inputs and

MCM69F618C–8.5 = 8.5 ns Access / 12 ns Cycle

MCM69F618C–9 = 9 ns Access / 12 ns Cycle

MCM69F618C–10 = 10 ns Access / 15 ns Cycle

MCM69F618C–12= 12 ns Access / 16.6 ns Cycle

Single 3.3 V + 10%, – 5% Power Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

5 V Tolerant on all Pins (Inputs and I/Os)

100–Pin TQFP Package

MCM69F618C

Order this document

by MCM69F618C/D

CASE 983A–01

TQ PACKAGE

MCM69F618C

TQFP

Related parts for MCM69F618CTQ8.5

MCM69F618CTQ8.5 Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM The MCM69F618C is a 1M–bit synchronous fast static RAM designed to pro- vide a burstable, high performance, secondary cache for the 68K Family, PowerPC , 486, ...

Page 2

LBO ADV K ADSC ADSP SA SA1 SA0 SGW SW SBa SBb SE1 SE2 SE3 G MCM69F618C 2 FUNCTIONAL BLOCK DIAGRAM FUNCTIONAL BLOCK DIAGRAM BURST COUNTER K2 CLR 2 16 ADDRESS REGISTER WRITE REGISTER a WRITE REGISTER b K2 ENABLE ...

Page 3

DQb 8 DQb DQb 12 DQb ...

Page 4

PIN DESCRIPTIONS Pin Locations (a) 58, 59, 62, 63, 68, 69, 72, 73 12, 13, 18, 19, 22, 23 32, 33, 34, 35, 44, 45, 46, 47, 48, 80, ...

Page 5

TRUTH TABLE (See Notes 1 through 4) Address Next Cycle Used SE1 Deselect None 1 Deselect None 0 Deselect None 0 Deselect None X Deselect None X Begin Read External 0 Begin Read External 0 Continue Read Next X Continue ...

Page 6

ABSOLUTE MAXIMUM RATINGS (See Note 1) Rating Power Supply Voltage Voltage Relative for Any Pin Except V DD Output Current (per I/O) Package Power Dissipation (See Note 2) Temperature Under Bias Storage Temperature NOTES: 1. Permanent device ...

Page 7

DC OPERATING CONDITIONS AND CHARACTERISTICS ( 3 10%, – 5 Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input Low Voltage Input High Voltage * V IL – ...

Page 8

AC OPERATING CONDITIONS AND CHARACTERISTICS ( 3 10%, – 5 Unless Otherwise Noted) Input Timing Measurement Reference Level . . . . . . . . . . . ...

Page 9

MOTOROLA FAST SRAM MCM69F618C 9 ...

Page 10

The MCM69F618C BurstRAM is a high speed synchro- nous SRAM that is intended for use primarily in secondary or level two (L2) cache memory applications. L2 caches are found in a variety of classes of computers — from the desk- ...

Page 11

... MCM Motorola Memory Prefix Part Number Full Part Numbers — MCM69F618CTQ8.5 MCM69F618CTQ8.5R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...

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H A– –A– 100 1 D1 TIPS 0.20 (0.008) C A–B A –H– –C– SEATING PLANE 0.05 (0.002 VIEW AB How to reach us: USA / ...

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