HY5DV641622AT-33 Hynix Semiconductor, HY5DV641622AT-33 Datasheet

no-image

HY5DV641622AT-33

Manufacturer Part Number
HY5DV641622AT-33
Description
64M(4Mx16) DDR SDRAM, VDD=3.3V, 300MHz
Manufacturer
Hynix Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HY5DV641622AT-33
Manufacturer:
HYNIX
Quantity:
2 890
HY5DV641622AT
64M(4Mx16) DDR SDRAM
HY5DV641622AT
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7/May. 02
1

Related parts for HY5DV641622AT-33

HY5DV641622AT-33 Summary of contents

Page 1

... DDR SDRAM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.7/May. 02 HY5DV641622AT HY5DV641622AT 1 ...

Page 2

... Changed from 3.15V/3.30V/3.45V to 3.20V/3.30V/3.45V (min/typ/max) b) 300Mhz : Changed from 3.15V/3.30V/3.45V to 3.35V/3.45V/3.55V (min/typ/max) 6) Modified ‘Burst Read followed by Burst Write’ function - Burst Write command must be issued after ( ticks of clock from Burst Read command, not (CL + BL/2) ticks of clock at 300/275Mhz Rev. 0.7/May. 02 HY5DV641622AT 2 ...

Page 3

... Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe ORDERING INFORMATION Part No. Power Supply HY5DV641622AT-33 HY5DV641622AT- HY5DV641622AT-4 DDQ HY5DV641622AT-5 Rev. 0.7/May. 02 power supply • ...

Page 4

... NC 25 BA0 26 BA1 27 A10/ ROW and COLUMN ADDRESS TABLE Items Organization Row Address Column Address Bank Address Refresh HY5DV641622AT DQ15 64 V SSQ 63 DQ14 62 DQ13 61 V DDQ 60 DQ12 59 DQ11 58 V SSQ 57 DQ10 56 DQ9 55 ...

Page 5

... Used to capture write data. LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15. Data input / output pin : Data Bus Power supply for internal circuits and input buffers. Power supply for output buffers for noise immunity. Reference voltage for inputs for SSTL interface. No connection. HY5DV641622AT 5 ...

Page 6

... BA0, BA1 Rev. 0.7/May. 02 Write Data Register 2-bit Prefetch Unit 32 Bank 1Mx16/Bank0 Control 1Mx16/Bank1 1Mx16/Bank2 1Mx16/Bank3 Mode Row Register Decoder Column Decoder Column Address Counter DLL CLK Block Mode Register HY5DV641622AT DQ[0:15] LDQS, UDQS Data Strobe CLK_DLL Transmitter Data Strobe DS Receiver 6 ...

Page 7

... HY5DV641622AT A10/ CAS WE ADDR code code ...

Page 8

... Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data. 2. LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively. Rev. 0.7/May. 02 CKEn /CS, /RAS, /CAS, / HY5DV641622AT A10/ LDM UDM ADDR ...

Page 9

... OPCODE BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP HY5DV641622AT Command Action DSEL NOP or power down NOP NOP or power down BST ILLEGAL ILLEGAL ILLEGAL ACT Row Activation PRE/PALL NOP AREF/SREF Auto Refresh or Self Refresh MRS Mode Register Set ...

Page 10

... BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP OPCODE HY5DV641622AT Command Action ACT ILLEGAL PRE/PALL Term burst, precharge AREF/SREF ILLEGAL MRS ILLEGAL DSEL Continue burst to end NOP Continue burst to end BST ILLEGAL ILLEGAL ILLEGAL ACT ILLEGAL ...

Page 11

... OPCODE BA, CA, AP READ/READAP HY5DV641622AT Command Action DSEL NOP - Enter ROW ACT after tRCD NOP NOP - Enter ROW ACT after tRCD BST ILLEGAL ILLEGAL ILLEGAL ACT ILLEGAL PRE/PALL ILLEGAL AREF/SREF ILLEGAL MRS ILLEGAL DSEL ...

Page 12

... H BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP OPCODE HY5DV641622AT Command Action ILLEGAL ACT ILLEGAL PRE/PALL ILLEGAL AREF/SREF ILLEGAL MRS ILLEGAL DSEL NOP - Enter IDLE after tMRD NOP NOP - Enter IDLE after tMRD BST ILLEGAL ILLEGAL ILLEGAL ...

Page 13

... HY5DV641622AT /ADD Action X INVALID X Exit self refresh, enter idle after tSREX X Exit self refresh, enter idle after tSREX X ILLEGAL X ILLEGAL X ILLEGAL X NOP, continue self refresh X INVALID X Exit power down, enter idle ...

Page 14

... IDLE SREX PDEN PDEX AREF ACT POWER DOWN PDEN PDEX BANK ACTIVE WRITE READ WITH WITH AUTOPRE- AUTOPRE- CHARGE CHARGE WRITE PRE- CHARGE POWER-UP POWER APPLIED HY5DV641622AT SELF REFRESH AUTO REFRESH BST READ READAP READ WRITEAP PRE(PALL) Command Input Automatic Sequence 14 ...

Page 15

... V in the following power up sequencing and attempt to maintain CKE at LVC- REF supply into any pin. Sequencing Voltage relationship to avoid latch-up After or with V DD After or with V DDQ After or with V DDQ HY5DV641622AT , then and finally DDQ . Except for TT < 0.3V DD < 0.3V DDQ < ...

Page 16

... CODE CODE tRP tMRD EMRS Set MRS Set Precharge All Reset DLL (with A8=H) *200 cycles of CK are required (for DLL locking) before any executable command can be applied. HY5DV641622AT NOP PRE AREF CODE CODE CODE 200 cycles of CK* tRP tRFC 2 or more ...

Page 17

... Yes CAS Latency Reserved Reserved Reserved Reserved Reserved Reserved HY5DV641622AT Burst Length Burst Length Sequential Reserved Reserved Reserved ...

Page 18

... HY5DV641622AT Interleave ...

Page 19

... The HY5DV641622A supports Full, Half strength driver and Matched impedance driver, intended for lighter load and/or point-to-point environments. The Full drive strength for all output is specified to be SSTL_2, CLASS II. Half strength driver is to define about 50% of Full drive strength and Matched impedance driver, about 30% of Full drive strength. Rev. 0.7/May. 02 HY5DV641622AT 19 ...

Page 20

... All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. Rev. 0.7/May RFU HY5DV641622AT DLL A0 DLL enable 0 Enable 1 Diable Output Driver Impedance Control Full Half RFU* Matched Impedance (Weak) 20 ...

Page 21

... DDQ 2% of the dc value. Rating -55 ~ 125 -0.5 ~ 3.6 -0.5 ~ 3.6 -0 260 10 = 0V) SS Max Unit 3.3 3.45 V 3.3 3.45 V 3.55 V 2.5 2.625 0.3 V DDQ - V - 0.15 V REF V + 0.04 V REF REF 0.51*V V DDQ DDQ HY5DV641622AT Unit sec Note ...

Page 22

... Unit 0. disabled 2.7V OUT OUT = 0V) SS Speed 150 130 120 20 = min 100 min CK 100 90 80 250 230 210 200 2 HY5DV641622AT Note -15.2mA +15.2mA OL Unit Note 5 100 190 1 ...

Page 23

... C, Voltage referenced to V Symbol Min 0.35 IH(AC) REF V IL(AC) V 0.7 ID(AC) V 0.5*V IX(AC) DDQ of the transmitting device and must track variations in the DC level of the same. DDQ o (TA Voltage referenced to VSS = 0V HY5DV641622AT = 0V) SS Max Unit 0.35 V REF V + 0.6 V DDQ -0.2 0.5*V +0.2 V DDQ Value Unit V x 0.5 V DDQ ...

Page 24

... AC t -1.0 0.5 -1.0 DQSCK - 0.4 - DQSQ t t HPmin HPmin QHS QHS t t CH/L CH min min t - 0.4 - QHS t 0 0 0.4 0.6 0.4 DQSH t 0.4 0.6 0.4 DQSL t 0.8 1.25 0.8 DQSS HY5DV641622AT 4 5 Max Min Max Min Max - 120K 36 120K 40 120K - 4 ...

Page 25

... Signal transitions through the DC region must be monotonic. Rev. 0.7/May Symbol Min Max Min t 0 0 0.9 1.1 0.9 RPRE t 0.4 0.6 0.4 RPST WPRES t 1.5 - 1.5 WPREH t 0.4 0.6 0.4 WPST MRD t 200 - 200 XSC t - 15.6 - REFI HY5DV641622AT 4 5 Max Min Max Min Max - 0 0.4 - 0.5 - 1.1 0.9 1.1 0.9 1.1 0.6 0.4 0.6 0.4 0 1.5 - 1.5 - 0.6 0.4 0.6 0.4 0 200 - 200 - 15.6 - 15.6 - 15.6 Unit Note ...

Page 26

... These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT Output R =25 S Rev. 0.7/May. 02 Pin CK, CK All other input-only pins DQ, DQS /2, V peak-to-peak = 0.2V O DDQ = Zo=50 C =30pF L HY5DV641622AT Symbol Min Max C 2.0 3 2.0 3 4.0 5 REF Unit ...

Page 27

... Note : Package do not mold protrusion. Allowable protrusion of both sides is 0.4mm. Rev. 0.7/May. 02 BASE PLANE 22.33 (0.879) 22.12 (0.871) 0.35 (0.0138) 0.25 (0.0098) SEATING PLANE 0.15 (0.0059) 0.05 (0.0020) HY5DV641622AT Unit : mm(Inch) 11.94 (0.470) 11.79 (0.462) 10.26 (0.404) 10.05 (0.396 Deg. 0.597 (0.0235) 0.210 (0.0083) 0.406 (0.0160) 0.120 (0.0047) ...

Related keywords