M54583FP Powerex, Inc., M54583FP Datasheet

M54583FP

Manufacturer Part Number

M54583FP

Description

Manufacturer

Powerex, Inc.

Datasheet

1.M54583FP.pdf (4 pages)

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Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

M54583FP

Manufacturer:

MIT

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

M54583FP

Manufacturer:

MITSUBI

Quantity:

20 000

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DESCRIPTION

M54583P and M54583FP are eight-circuit collector-current-

synchronized Darlington transistor arrays. The circuits are

made of PNP and NPN transistors. Both the semiconductor

integrated circuits perform high-current driving with ex-

tremely low input-current supply.

FEATURES

APPLICATION

Interfaces between microcomputers and high-voltage, high-

current drive systems, drives of relays and printers, and

MOS-bipolar logic IC interfaces

FUNCTION

The M54583 is produced by adding PNP transistors to

M54523 inputs. Eight circuits having active L-level inputs are

provided.

Resistance of 7k

each input and PNP transistor base. The input diode is in-

tended to prevent the flow of current from the input to the

one of the inputs of the 8 circuits is “H” and the others are “L”

to save power consumption. The diode is inserted to prevent

such misoperation.

This device is most suitable for a driver using NMOS IC out-

put especially for the driver of current sink.

Collector current is 400mA maximum. Collector-emitter sup-

ply voltage is 50V.

The 54583FP is enclosed in a molded small flat package,

enabling space saving design.

POWEREX

High breakdown voltage (BV

High-current driving (Ic(max) = 400mA)

Active L-level input

With input clamping diodes

Wide operating temperature range (Ta = –20 to +75 C)

. Without this diode, the current flow from “H” input to the

and the “L” input circuits is activated, in such case where

and diode are provided in series between

CEO

50V)

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

PIN CONFIGURATION (TOP VIEW)

CIRCUIT DIAGRAM (EACH CIRCUIT)

The diode, indicated with the dotted line, is parasitic, and cannot

be used.

INPUT

GND

IN1

IN2

IN3

IN4

IN5

IN6

IN7

IN8

IN1

IN2

IN3

IN4

IN5

IN6

IN7

IN8

Outline 20P2N-A

The eight circuits share the V

Outline 18P4G

M54583FP

M54583P/FP

M54583P

2.7k

7.2k

NC : No connection

OUTPUT

and GND.

Unit :

OUTPUT

GND

Aug.1999

Related parts for M54583FP

M54583FP Summary of contents

Page 1

... POWEREX DESCRIPTION M54583P and M54583FP are eight-circuit collector-current- synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. FEATURES High breakdown voltage (BV 50V) CEO High-current driving (Ic(max) = 400mA) ...

Page 2

POWEREX ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter V Supply voltage CC V Collector-emitter voltage CEO V Input voltage I I Collector current C P Power dissipation d T Operating temperature opr T ...

Page 3

... 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54583FP •The collector current values represent the current per circuit. •Repeated frequency 10Hz •Vcc =5.0V •The value in the circle represents the • value of the simultaneously-operated circuit. ...

Page 4

POWEREX Input Characteristics –1.0 –0 –0 – –20 C –0.4 –0 ...

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