TPCS8204 TOSHIBA Semiconductor CORPORATION, TPCS8204 Datasheet

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TPCS8204

Manufacturer Part Number
TPCS8204
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10 s)
Drain power
dissipation
(t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DC
Pulse
Single-device
operation (Note 3a)
Single-device value
at dual operation
Single-device
operation (Note 3a)
Single-device value
at dual operation
GS
(Note 2a, 3b, 5)
= 20 kΩ)
DSS
th
(Note 3b)
(Note 3b)
= 0.5~1.2 V (V
(Note 1)
(Note 1)
(Note 4)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
P
P
P
P
V
V
TPCS8204
fs
E
E
T
I
I
T
DGR
GSS
D (1)
D (2)
D (1)
D (2)
DSS
I
DP
AR
DS
| = 15 S (typ.)
AS
AR
stg
D
ch
= 10 V, I
= 13 mΩ (typ.)
DS
= 20 V)
−55~150
D
Rating
0.075
0.75
0.35
46.8
±12
150
1.1
0.6
= 200 μA)
20
20
24
6
6
1
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.035 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
6
3
2-3R1E
TPCS8204
2007-01-16
5
4
Unit: mm

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TPCS8204 Summary of contents

Page 1

... GSS 1 0.75 D (2) P 0 0.35 D ( 0.075 150 °C ch −55~150 T °C stg 1 TPCS8204 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 2007-01-16 ...

Page 2

... R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Part No. (or abbreviation code) b) Device mounted on a glass-epoxy board ( Ω TPCS8204 Max Unit 114 °C/W 167 208 °C/W 357 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2007-01-16 ...

Page 3

... Q g ∼ − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCS8204 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ ⎯ 20 ⎯ ⎯ 8 ⎯ 0.5 1.2 ⎯ ⎯ ⎯ ...

Page 4

... Drain-source voltage V 0.8 0.6 0.4 0 Gate-source voltage V 100 2 0.1 4 TPCS8204 I – Common source Ta = 25°C Pulse test 1 ( – Common source Ta = 25°C Pulse test 1 (V) ...

Page 5

... Dynamic input/output characteristics 20 (Note 2a (Note 2b 200 0 5 TPCS8204 I – − Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1.0 −1.2 ( – Common source 200 μA ...

Page 6

... I D max (pulse 0.5 0.3 0.1 * Single pulse Ta = 25°C 0.05 0.03 Curves must be derated linearly V DSS max with increase in temperature. 0.01 0.01 0.03 0.1 0 Drain-source voltage V (V) DS − 0 Pulse width t (S) w (Note 3b) 30 100 6 TPCS8204 (4) (3) (2) (1) Single pulse 100 1000 2007-01-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCS8204 20070701-EN 2007-01-16 ...

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