IRF1902TR International Rectifier Corp., IRF1902TR Datasheet
IRF1902TR
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IRF1902TR Summary of contents
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Ultra Low On-Resistance N-Channel MOSFET l Surface Mount l l Available in Tape & Reel Description These N-Channel HEXFET power MOSFET International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides ...
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IRF1902 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 7.0V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 10 BOTTOM 2.25V 2.25V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 25°C ...
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IRF1902 10000 0V, C iss = rss = oss = 1000 Ciss Coss 100 Crss ...
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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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IRF1902 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0. 4.2A 0.07 0.06 0.05 0.04 2.0 4.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...
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250µA 1.0 0.5 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 100 125 150 ...
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IRF1902 SO-8 Package Details 0.25 [.010 NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ...
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SO-8 Tape and Reel . . ...