FY8AAJ-03F Renesas Electronics Corporation., FY8AAJ-03F Datasheet
FY8AAJ-03F
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FY8AAJ-03F Summary of contents
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... FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET Features Drive voltage : DSS DS(ON) (max Outline SOP-8 8 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) ...
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... FY8AAJ-03F Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance ...
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... FY8AAJ-03F Performance Curves Drain Power Dissipation Derating Curve 2.0 1.6 1.2 0.8 0 100 Case Temperature Tc (°C) Output Characteristics (Typical 25°C Pulse Test 10V 0.4 0.8 1.2 Drain-Source Voltage V On-State Voltage vs. Gate-Source Voltage (Typical) 1.0 0.8 0.6 0.4 0 Gate-Source Voltage V Rev.1.00, Aug.20.2004, page ...
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... FY8AAJ-03F Transfer Characteristics (Typical Gate-Source Voltage V Capacitance vs. Drain-Source Voltage (Typical) 3 Tch = 25° 1MHz – Drain-Source Voltage V Gate-Source Voltage vs. Gate Charge (Typical 20V 4 25V ...
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... FY8AAJ-03F On-State Resistance vs. Channel Temperature (Typical 10V Pulse Test –1 10 – 100 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) 1 1mA D 1.2 1.0 0.8 0.6 0.4 – 100 Channel Temperature Tch (°C) ...
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... Rev.1.00, Aug.20.2004, page Lead Material 0.07 Cu alloy A 1.8 max Detail A 1.5 0.1±0.1 0.05 or then 10°max 0.15 Quantity Standard order code 3000 Type name – T +Direction ( Type name 100 Dimension in Millimeters Symbol Min Typ Max Standard order code example FY8AAJ-03F-T13 FY8AAJ-03F ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...