MMSF3P03HDR2 Freescale Semiconductor, Inc, MMSF3P03HDR2 Datasheet

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MMSF3P03HDR2

Manufacturer Part Number
MMSF3P03HDR2
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMSF3P03HDR2
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
MAXIMUM RATINGS
DEVICE MARKING
Motorola, Inc. 1996
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ T A = 25 C
Drain Current
Drain Current
Total Power Dissipation @ T A = 25 C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
S3P03
MMSF3P03HDR2
MiniMOS
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
(V DD = 20 Vdc, V GS = 5.0 Vdc, I L = 9.0 Apk, L = 14 mH, R G = 25 )
Device
devices are an advanced series of power MOSFETs
— Continuous @ T A = 100 C
— Single Pulse (t p
(T J = 25 C unless otherwise noted) (1)
Reel Size
ORDERING INFORMATION
Data Sheet
13
10 s)
12 mm embossed tape
Tape Width
Rating
2500 units
Quantity
G
D
S
Symbol
SINGLE TMOS POWER FET
V DGR
V DSS
R JA
MMSF3P03HD
V GS
E AS
I DM
P D
T L
Source
Source
I D
I D
Gate
CASE 751–05, Style 13
N–C
R DS(on) = 0.1 OHM
– 55 to 150
Motorola Preferred Device
3.0 AMPERES
30 VOLTS
Order this document
by MMSF3P03HD/D
Top View
SO–8
Value
1
2
3
4
567
260
4.6
3.0
2.5
30
30
50
50
20
8
7
6
5
Watts
Drain
Drain
Drain
Drain
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
C
C
1

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MMSF3P03HDR2 Summary of contents

Page 1

... Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max. ORDERING INFORMATION Device Reel Size MMSF3P03HDR2 embossed tape Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — ...

Page 2

MMSF3P03HD ( 25°C unless otherwise noted) (1) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4 3 0.4 0.8 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 0 1.5 ...

Page 4

MMSF3P03HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by ...

Page 5

TOTAL CHARGE (nC) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge DRAIN–TO–SOURCE DIODE CHARACTERISTICS The switching characteristics of ...

Page 6

MMSF3P03HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E–03 Figure 15. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data Normalized 10s. Chip ...

Page 8

MMSF3P03HD INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 10

MMSF3P03HD –A– –B– –T– 0.25 (0.010) M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its ...

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