2SD1760 Rohm, 2SD1760 Datasheet
2SD1760
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2SD1760 Summary of contents
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... Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 ! ! ! ! Features 1) Low V . CE(sat 0.5V (Typ.) CE(sat 0.2A Complements the 2SB1184 / 2SB1243 Structure Epitaxial planar type NPN silicon transistor ! ! ! ! Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V Collector current 2SD1760 Collector power ...
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... Ta = 100°C 100 50 25°C −25° 0.01 0.02 0.05 0.1 0.2 0 (A) COLLECTOR CURRENT : I C Fig.5 DC current gain vs. collector curren( ΙΙ ) 2SD1760 / 2SD1864 Conditions =40V =4V =2A/0.2A ∗ =3V, I =0.5A ∗ C =5V, I =−500mA, f=30MHz ∗ E =10V, I =0A, f=1MHz 82~180 120~270 180~390 3 ...
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... EMITTER CURRENT : −I (mA) E Fig.8 Gain bandwidth product vs. emitter current V = =0.2A C 100 100 1sec 10sec 100sec (ms) TIME : T Fig.11 Transient thermal resistance (2SD1760) 2SD1760 / 2SD1864 1000 °C 500 f = 1MHz 200 100 0.1 0.2 0 100 (V) ...
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... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...