IRF7314TR International Rectifier Corp., IRF7314TR Datasheet
![no-image](/images/manufacturer_photos/0/3/339/international_rectifier_corp__sml.jpg)
IRF7314TR
Available stocks
Related parts for IRF7314TR
IRF7314TR Summary of contents
Page 1
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...
Page 2
IRF7314 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° T ...
Page 4
IRF7314 2 -2.9A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0.0 ...
Page 5
1200 oss ds gd 1000 ...
Page 6
IRF7314 Package Outline SO8 Outline 0.25 (.010 ...
Page 7
Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) ...