PHN203 Philips Semiconductors, PHN203 Datasheet

no-image

PHN203

Manufacturer Part Number
PHN203
Description
Dual N-channel enhancement mode TrenchMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHN203
Manufacturer:
NXP
Quantity:
30 000
Part Number:
PHN203
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
FEATURES
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
GENERAL DESCRIPTION
N-channel
field-effect power transistor in a
plastic envelope using ’trench’
technology. The device has very
low on-state resistance. It is
intended for use in dc to dc
converters and general purpose
switching applications.
The PHN203 is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 Surface mounted on FR4 board, t
January 1999
Dual N-channel enhancement mode
TrenchMOS
SYMBOL
V
V
V
V
I
I
I
P
T
D
D
DM
stg
DS
DS
DGR
GS
tot
, T
j
enhancement
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per MOSFET
Drain current per MOSFET (both
MOSFETs conducting)
Drain current per MOSFET (pulse
peak value)
Total power dissipation (either or
both MOSFETs conducting)
Storage & operating temperature
TM
transistor
mode
1
10 sec
PINNING
SYMBOL
1
PIN
5,6
7,8
1
1
2
3
4
source 1
gate 1
source 2
gate 2
drain 2
drain 1
d1
s1
CONDITIONS
T
R
T
T
T
T
T
T
T
j
a
a
a
a
a
a
a
GS
= 25 ˚C to 150˚C
DESCRIPTION
= 25 ˚C
= 70 ˚C
= 25 ˚C
= 70 ˚C
= 25 ˚C
= 25 ˚C
= 70 ˚C
d1
g1
= 20 k
1
d2
s2
d2
g2
SOT96-1
QUICK REFERENCE DATA
R
R
MIN.
- 55
DS(ON)
DS(ON)
-
-
-
-
-
-
-
-
-
-
-
pin 1 index
55 m (V
V
30 m (V
I
Product specification
D
DS
= 6.3 A
MAX.
1
8
= 25 V
150
6.3
4.4
3.5
1.3
25
25
25
25
5
2
20
7
2
GS
GS
6
3
PHN203
= 4.5 V)
= 10 V)
5
4
Rev 1.000
UNIT
W
W
˚C
V
V
V
V
A
A
A
A
A

Related parts for PHN203

PHN203 Summary of contents

Page 1

... The device has very low on-state resistance intended for use converters and general purpose switching applications. The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL ...

Page 2

... Resistive load Measured from drain lead to centre of die Measured from source lead to source bond pad MHz Product specification PHN203 TYP. MAX. UNIT 10 - 62.5 K/W 150 - K/W MIN. MAX. UNIT - 6.3 MIN. TYP. MAX. UNIT -55˚C 22 2.8 = 150˚C 0 -55˚ ...

Page 3

... Fig.3. Safe operating area ˚ f single pulse; parameter 0.5 0.2 0.1 0.05 0.02 P single pulse 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter j-a p PHN203 2. PHN203 100 100 100 p PHN203 D = tp/T Rev 1.000 ...

Page 4

... Transconductance, gfs (S) VDS > RDS(ON Drain current SOT223 30V Trench Normalised RDS(ON) = f(Tj 100 f(T ) DS(ON) DS(ON)25 ˚C j VGS(TO max. typ. 2 min -60 -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA; V GS(TO PHN203 PHN203 150 ˚ 150 = Rev 1.000 ...

Page 5

... Drain-Source Voltage, VSDS (V) Fig.14. Typical reverse diode current. ); conditions parameter T SDS GS Non-repetitive Avalanche current, IAS (A) Tj prior to avalanche =125 C VDS tp ID 1E-05 1E-04 1E-03 Avalanche time, tp (s) ) versus avalanche time (t AS unclamped inductive load PHN203 PHN203 0.8 0 PHN203 25 C 1E- Rev 1.000 ...

Page 6

... REFERENCES IEC JEDEC EIAJ 076E03S MS-012AA Fig.16. SOT96 surface mounting package. 6 Product specification SOT96 detail X ( 1.0 0.7 0.7 0.25 0.25 0.1 0.4 0.6 0 0.039 0.028 0.028 0.01 0.01 0.004 0.016 0.024 0.012 EUROPEAN ISSUE DATE PROJECTION 95-02-04 97-05-22 PHN203 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1999 7 Product specification PHN203 Rev 1.000 ...

Related keywords