M54587P Powerex, Inc., M54587P Datasheet

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M54587P

Manufacturer Part Number
M54587P
Description
Manufacturer
Powerex, Inc.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
M54587P
Manufacturer:
WAGO
Quantity:
10 000
DESCRIPTION
M54587P and M54587FP are eight-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
APPLICATION
Interfaces between microcomputers and high-voltage, high-
current drive systems, drives of relays and MOS-bipolar logic
IC interfaces
FUNCTION
The M54587 is produced by adding PNP transistors to
M54585 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7k
each input and PNP transistor base. The input diode is in-
tended to prevent the flow of current from the input to the
V
V
one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC out-
put especially for the driver of current sink.
Collector current is 500mA maximum. Collector-emitter sup-
ply voltage is 50V.
The M54587FP is enclosed in a molded small flat package,
enabling space saving design.
POWEREX
CC
CC
High breakdown voltage (BV
High-current driving (I
“L” active level input
With input diode
With clamping diodes
Wide operating temperature range (Ta = –20 to +75 C)
. Without this diode, the current flow from “H” input to the
and the “L” input circuits is activated, in such case where
and diode are provided in series between
C(max)
= 500mA)
CEO
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
50V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM (EACH CIRCUIT)
INPUT
Package type
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
The eight circuits share the Vcc, COM and GND
7K
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND
7K
M54587P/FP
10
1
2
3
4
5
6
7
8
9
20P4(P)
20P2N-A(FP)
2.7K
7.2K
19
18
17
16
15
14
13
12
11
20
3K
COM COMMON
O1
O2
O3
O4
O5
O6
O7
O8
V
CC
NC : No connection
OUTPUT
V
COM
OUTPUT
GND
Unit :
CC
Mar.2002

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M54587P Summary of contents

Page 1

... POWEREX 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-current- synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. ...

Page 2

... 200mA –3. 400mA 50V 5V – 350mA Test conditions C = 15pF (note 1) L M54587P/FP Ratings 10 –0.5 ~ +50 –0 500 500 50 1.79/1.1 –20 ~ +75 –55 ~ +125 Unit Limits min typ max 50 — — — 1.2 2.4 — 0.95 1.6 — –290 –600 — 1.4 2.4 — ...

Page 3

... 100 0 M54587P/FP 50% 50% 50% ton toff Output Saturation Voltage Collector Current Characteristics –20 C 0.5 1.0 1.5 2.0 (V) CE(sat) (M54587P 10Hz 100 Duty cycle (%) Mar.2002 ...

Page 4

... 100 – ( (V) I M54587P/FP (M54587FP 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics – Collector current I (mA) C Driver Supply Characteristics – Supply voltage Vcc (V) ...

Page 5

... POWEREX Clamping Diode Characteristics 500 400 –20 C 300 200 100 0 0 0.5 1.0 Forward bias voltage V MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 1.5 2.0 (V) F M54587P/FP Mar.2002 ...

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