SK80GB125T Semikron International, SK80GB125T Datasheet
SK80GB125T
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SK80GB125T Summary of contents
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... SK80GB125T ® SEMITOP 3 IGBT Module SK80GB125T Preliminary Data Features Typical Applications Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 21-02-2007 SCT Values Units min. typ. max. Units © by SEMIKRON ...
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... SK80GB125T ® SEMITOP 3 IGBT Module SK80GB125T Preliminary Data Features Typical Applications Characteristics Symbol Conditions Inverse Diode Temperature sensor This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability ...
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... SK80GB125T Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 21-02-2007 SCT ) G © by SEMIKRON ...
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... SK80GB125T Fig. 7 Typ. switching times vs Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic 21-02-2007 SCT G © by SEMIKRON ...
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... SK80GB125T UL Recognized File no 532 5 21-02-2007 SCT Dimensions in mm © by SEMIKRON ...