BYG50K Philips Semiconductors, BYG50K Datasheet
BYG50K
Available stocks
Related parts for BYG50K
BYG50K Summary of contents
Page 1
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 ...
Page 2
... V repetitive peak reverse voltage RRM BYG50D BYG50G BYG50J BYG50K BYG50M V continuous reverse voltage R BYG50D BYG50G BYG50J BYG50K BYG50M I average forward current F(AV) I non-repetitive peak forward current FSM 1996 May 24 DESCRIPTION DO-214AC; SOD106 surface mountable package with glass passivated chip. cathode handbook, 4 columns ...
Page 3
... Philips Semiconductors Controlled avalanche rectifiers SYMBOL PARAMETER E non-repetitive peak reverse avalanche RSM energy BYG50D to J BYG50K and M T storage temperature stg T junction temperature j ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V forward voltage F V reverse avalanche (BR)R breakdown voltage BYG50D ...
Page 4
... Philips Semiconductors Controlled avalanche rectifiers GRAPHICAL DATA 4 handbook, halfpage I F(AV 1.57. R RRMmax Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 200 handbook, halfpage 160 120 400 Device mounted as shown in Fig.7. Solid line PCB. ...
Page 5
... Philips Semiconductors Controlled avalanche rectifiers 3 10 handbook, halfpage RMMmax Fig.6 Reverse current as a function of junction temperature; maximum values. handbook, full pagewidth DUT + Input impedance oscilloscope pF; t Source impedance ns. r Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 May 24 ...
Page 6
... Philips Semiconductors Controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth 2.3 2.0 0.05 2.8 1.6 2.4 1.4 Dimensions in mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data ...