QCA200A60 Sanrex Corp., QCA200A60 Datasheet

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QCA200A60

Manufacturer Part Number
QCA200A60
Description
600V transistor module
Manufacturer
Sanrex Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
QCA200A60
Manufacturer:
SANREX
Quantity:
57
Part Number:
QCA200A60
Manufacturer:
SANREX
Quantity:
20 000
Part Number:
QCA200A60
Quantity:
60
QCA200 is a dual Darlington power transistor module which has series- connected high
speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
■Maximum Ratings
■Electrical Characteristics
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
V
V
(Applications)
Symbol
Symbol
Rth(j-c)
CEO (SUS)
V
V
I
Low saturation voltage for higher efficiency.
High DC current gain h
Isolated mounting base
V
Motor Control(VVVF) , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
CEX (SUS)
C
V
V
V
V
Tstg
−I
V
I
I
CE(sat)
BE(sat)
EBO
h
ton
CBO
=200A、V
EBO
P
CBO
CEX
EBO
I
I
T
ts
ECO
tf
ISO
TRANSISTOR MODULE
QCA200A40/60
C
B
FE
T
j
C
10V for faster switching speed.
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter
Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
CEX
=400/600V
Mounting (M6)
Terminal(M6)
FE
Item
Item
On Time
Storage Time
Fall Time
QCA200A40
QCA200A60
QCA200A40
QCA200A60
( )pw≦1ms
V
T
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
Typical Value
V
V
Ic=1A
Ic=40A,I
Ic=200A,V
Ic=200A,V
Ic=200A,I
Ic=200A,I
Vcc=300V,Ic=200A
I
−Ic=200A
Transistor part
Diode part
B1
C
BE
CB
EB
=25℃
=4A,I
=−2V
=V
=V
EBO
CBO
B2
B2
E2
B
B
=−4A
=−8A
CE
CE
=2.7A
=2.7A
Conditions
Conditions
=2V
=5V
B2X
B2
C2E1
B1
C1
(Tj=25℃ unless otherwise specified)
QCA200A40 QCA200A60
B
B
2
1
X
X
Min.
400
400
300
450
400
600
100
75
−40 to +150
−40 to +125
14.0
C
2
E
200(400)
1
4.7(48)
4.7(48)
Ratings
Ratings
25.0
1250
2500
108max
93±0.5
470
200
E
10
12
2
25.0
Max.
3-M6
L=10max
12.0
600
600
800
C
2.0
2.0
2.5
2.0
3.0
1.4
0.1
0.3
1
UL;E76102 ( M)
B
E
E
B
2
2
1
1
Unit:A
(㎏f・B)
℃/W
AMP110
t=0.5
N・m
4- φ6.5
Unit
Unit
mA
mA
μs
W
A
A
A
V
V
V
V
g
V
V
V
V
V

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QCA200A60 Summary of contents

Page 1

... 25.0 25.0 14.0 3-M6 AMP110 L=10max t=0.5 Unit:A (Tj=25℃ unless otherwise specified) Ratings Unit QCA200A40 QCA200A60 400 600 V 400 600 200(400) 200 1250 W −40 to +150 ℃ −40 to +125 ℃ 2500 V 4.7(48) N・m (㎏f・B) 4.7( ...

Page 2

D.C. Current Gain 1 0 3 5 Tj 125℃ 2 25℃ Tj 2 1 0 5 2 0 1 1 0 2 5 1 0 2 Collector Current Ic (A) Forward Bias Safe Operating Area 5 P Limited T 2 ...

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