1MBI200N-120 Fuji Electric holdings CO.,Ltd, 1MBI200N-120 Datasheet
1MBI200N-120
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1MBI200N-120 Summary of contents
Page 1
... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...
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... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 500 400 300 200 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : V Switching time vs. Collector current Vcc=600V, R =4.7 ohm 1000 100 10 0 100 200 Collector current : Ic [A] 500 400 300 ...
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... Switching time vs. RG Vcc=600V, Ic=200A 1000 100 Gate resistance : R Forward current vs. Forward voltage V =0V GE 500 400 300 200 100 Emitter-Collector voltage V (Forward voltage : V Switching loss vs. Collector current Vcc=600V, R =4.7 ohm 100 200 Collector current : Ic [A] =±15V, Tj=25°C 1000 800 ...
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... Transient thermal resistance 0.1 0.01 0.001 0.001 0.01 Pulse width : P Outline Drawings, mm 100 0.1 1 [sec.] W IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : V [V] CE mass : 380g 35 ...