SQD400BA60 Sanrex Corp., SQD400BA60 Datasheet
SQD400BA60
Manufacturer Part Number
SQD400BA60
Description
600V transistor module
Manufacturer
Sanrex Corp.
Datasheet
1.SQD400BA60.pdf
(2 pages)
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SanRex
SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH h
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr：200ns). The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
■Maximum Ratings
■Electrical Characteristics
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
●
●
●
●
●
V
Rth （ j-c）
（Applications）
V
Symbol
Symbol
V
V
I
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain h
Isolated mounting base
IV
Motor Control（VVVF） , AC/DC Servo,
UPS, Switching
Power Supply, Ultrasonic Application
CEO （SUS）
CEX （SUS）
C
V
V
V
V
Tstg
CE （sat）
BE （sat）
−I
V
I
I
h
ton
CBO
＝400A, V
EBO
P
trr
EBO
CBO
CEX
EBO
I
I
T
ts
ECO
tf
ISO
TRANSISTOR MODULE
SQD400BA60
C
B
FE
T
j
C
10V for faster switching speed.
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning
Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching
Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
CEX
®
＝600V
Item
Item
On Time
Storage Time
Fall Time
Mounting （M6）
Terminal （ M6）
Terminal （ M4） Recommended Value 12.5kgf･B
FE
. h
FE
≧750
（ ）=pw≦1ms
V
T
A.C.1minute
Recommended Value 43kgf･B
Recommended Value 43kgf･B
Typical Value
V
V
Ic＝1A
Ic＝80A，I
Ic＝400A，V
Ic＝400A，I
Ic＝400A，I
Vcc＝300V，Ic＝400A
I
−Ic＝400A
Vcc＝300V, Ic＝−400A, −di/dt＝300A/ μs, V
Transistor part
Diode part
B1
C
BE
CB
EB
＝25℃
＝0.8A，I
＝−2V
＝V
＝V
（Hi-β）
EBO
CBO
B2
EX
B
B
B2
＝−8A
CE
＝530mA
＝530mA
＝−8A
BX
＝2.5V
B
Conditions
Conditions
E
FE
, high
BE
＝−5V
C
（Tj＝25℃ unless otherwise specified）
×7.5
2-M4
Min.
450
600
750
EX
11.013.0
2-M6
×13
SQD400BA60
−40 to ＋150
−40 to ＋125
BX
400（800）
B
Ratings
Ratings
4.7 (48)
4.7 (48)
1.5 (15)
21.0
1500
2500
Typ.
108max
93±0.5
200
600
600
400
460
10
24
E
29.0
0.083
Max.
1600
UL;E76102 （ M）
C
0.25
4.0
2.5
3.0
2.0
8.0
2.0
1.8
Unit：A
(㎏f･B)
℃/W
N･m
4- φ6.5
Unit
Unit
mA
mA
μs
℃
℃
ns
W
A
A
A
V
V
V
V
g
V
V
V
V
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SQD400BA60 Summary of contents
Page 1
... TRANSISTOR MODULE SQD400BA60 SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH h speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, ＝ ...
Page 2
... V ＝−5V BE ２ ５ １ ０ − ２ ２ ５ １ ０ ２ 4 ０ ０ ６ ０ ０ SQD400BA60 （Typical） Tj＝25℃ ton ２ ０ ０ Collector Current Ic （A） I ＝−3A B2 −5A −8A Tj＝125℃ ...