2MBI300UC-120 Fuji Electric holdings CO.,Ltd, 2MBI300UC-120 Datasheet
![no-image](/images/manufacturer_photos/0/2/265/fuji_electric_holdings_co__ltd_sml.jpg)
2MBI300UC-120
Available stocks
Related parts for 2MBI300UC-120
2MBI300UC-120 Summary of contents
Page 1
... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...
Page 2
... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 800 700 VGE=20V 600 500 400 300 200 100 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 800 700 600 500 400 300 200 100 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25°C 100 ...
Page 3
... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 1000 100 10 0 100 200 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C 10000 1000 tr 100 10 0.1 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=± ...
Page 4
... Forward current vs. Forward on voltage (typ.) 800 700 Tj=25° 600 500 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M234 chip 1000 Tj=125°C 100 FWD IGBT ...