2MBI100NC-120 Fuji Electric holdings CO.,Ltd, 2MBI100NC-120 Datasheet
![no-image](/images/manufacturer_photos/0/2/265/fuji_electric_holdings_co__ltd_sml.jpg)
2MBI100NC-120
Available stocks
Related parts for 2MBI100NC-120
2MBI100NC-120 Summary of contents
Page 1
... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...
Page 2
... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 250 200 150 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : V Switching time vs. Collector current Vcc=600V, R =9.1 ohm 1000 100 100 Collector current : Ic [A] 250 200 150 100 [ [V] GE =±15V, Tj=25°C ...
Page 3
... Switching time vs. RG Vcc=600V, Ic=100A 1000 100 10 Gate resistance : R Forward current vs. Forward voltage V =0V GE 250 200 150 100 Emitter-Collector voltage V (Forward voltage : V Switching loss vs. Collector current Vcc=600V, R =9.1 ohm 100 Collector current : Ic [A] =±15V, Tj=25°C 1000 800 600 400 ...
Page 4
... Transient thermal resistance 1 0.1 0.01 0.001 0.001 0.01 Pulse width : P Outline Drawings 0.1 1 [sec.] W IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : V [V] CE mass : 240g 35 ...