2MBI100NB-120 Fuji Electric holdings CO.,Ltd, 2MBI100NB-120 Datasheet
2MBI100NB-120
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2MBI100NB-120 Summary of contents
Page 1
... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...
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... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 250 200 150 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : V Switching time vs. Collector current Vcc=600V, R =9.1 ohm 1000 100 100 Collector current : Ic [A] 250 200 150 100 [ [V] GE =±15V, Tj=25°C ...
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... Switching time vs. RG Vcc=600V, Ic=100A 1000 100 10 Gate resistance : R Forward current vs. Forward voltage V =0V GE 250 200 150 100 Emitter-Collector voltage V (Forward voltage : V Switching loss vs. Collector current Vcc=600V, R =9.1 ohm 100 Collector current : Ic [A] =±15V, Tj=25°C 1000 800 600 400 ...
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... Transient thermal resistance 1 0.1 0.01 0.001 0.001 0.01 Pulse width : P Outline Drawings 0.1 1 [sec.] W IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : V [V] CE mass : 370g 35 ...