7MBP200RA060 Fuji Electric holdings CO.,Ltd, 7MBP200RA060 Datasheet

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7MBP200RA060

Manufacturer Part Number
7MBP200RA060
Description
IGBT-IPM(600V/200A)
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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7MBP200RA060
IGBT-IPM R series
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DB
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Item
INV
DB
· Temperature protection provided by directly detecting the junction
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
temperature of the IGBTs
built-in control circuit
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
Collector power dissipation
Collector current
Collector power dissipation
Forward current of Diode
Collector current at off signal input
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector-Emitter saturation voltage
Forward voltage of Diode
ALM
ALM
to terminal No. 16.
between terminal No. 16 and 10.
One transistor
One transistor
DC
DC
1ms
Duty=57.8%
1ms
Mounting (M5)
Terminal (M5)
Symbol
V
V
V
V
V
I
I
-I
P
I
I
I
P
T
V
V
I
V
I
T
T
V
C
CP
C
CP
F
in
ALM *4
C
j
stg
op
DC
DC(surge)
SC
CES
R
C
C
CC*1
in *2
ALM*3
iso *5
Symbol
I
V
V
I
V
V
CES
CES
CE(sat)
F
CE(sat)
F
200
Min.
-40
-20
0
0
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-
-
-
Condtion
V
Ic=200A
-Ic=200A
V
Ic=75A
-Ic=75A
Rating
CE
CE
=600V input terminal open
=600V input terminal open
AC2.5
3.5 *6
3.5 *6
Max.
450
500
400
600
600
200
400
200
735
150
320
150
Vcc
125
100
75
75
20
Vz
15
1
Unit
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
600V / 200A 7 in one-package
Fig.1 Measurement of case temperature
Min.
Typ.
Max.
1.0
2.8
3.0
2.8
3.3
1.0
Unit
mA
mA
V
V
V
V

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7MBP200RA060 Summary of contents

Page 1

... IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level ...

Page 3

... Block diagram Outline drawings, mm IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Mass : 920g ...

Page 4

... Characteristics (Representative) Control circuit Power supply current vs. Switching frequency Tj=100°C 80 P-side 70 N-side Switching frequency : fsw (kHz) Under voltage vs. Junction temperature Junction temperature : Tj (°C) Alarm hold time vs. Power supply voltage 3 2.5 2 1 Power supply voltage : Vcc (V) 3 Vcc=17V 2.5 ...

Page 5

... Inverter Collector current vs. Collector-Emitter voltage Tj=25°C 350 300 250 200 150 100 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C 10000 1000 100 100 150 Collector current : Ic (A) Forward current vs. Forward voltage 350 300 250 200 ...

Page 6

... Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width :Pw (sec) Power derating for IGBT (per device) 800 700 600 500 400 300 200 100 Case Temperature : Tc (°C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25° 100 Collector current : Ic (A) 2000 1800 FWD ...

Page 7

... Over current protection vs. Junction temperature Vcc=15V 800 700 600 500 400 300 200 100 Junction temperature : Tj(°C) 80 100 120 140 IGBT-IPM ...

Page 8

... Brake Collector current vs. Collector-Emitter voltage Tj=25°C 120 100 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width :Pw (sec eratin ( era ture : T c (°C ) Vcc=15V 120 Vcc=17V 100 Vcc=13V 2.5 3 3.5 750 675 IGBT 600 ...

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