IRFS4710HR International Rectifier, IRFS4710HR Datasheet - Page 7

IRFS4710HR

Manufacturer Part Number
IRFS4710HR
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRFS4710HR

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.014Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
75A
Power Dissipation
3.8W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / Rohs Status
Not Compliant
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
P.W.
IRFB/IRFS/IRFL4710
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7

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