2N3501JANTX MICROSEMI, 2N3501JANTX Datasheet

2N3501JANTX

Manufacturer Part Number
2N3501JANTX
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of 2N3501JANTX

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
150V
Collector-base Voltage
150V
Emitter-base Voltage
6V
Collector Current (dc) (max)
300mA
Dc Current Gain (min)
100
Power Dissipation
1W
Operating Temp Range
-55C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3501JANTXV
Manufacturer:
Microsemi
Quantity:
1 400
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DEVICES
2N3498
2N3498L
T4-LDS-0056 Rev. 1 (080812)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for T
2. Derate linearly 28.6 W/°C for T
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
Collector-Base Cutoff Current
V
V
V
V
C
CB
CB
CB
CB
= 10mAdc
= 50Vdc
= 75Vdc
= 100Vdc
= 150Vdc
Parameters / Test Conditions
Parameters / Test Conditions
Parameters / Test Conditions
2N3499
2N3499L
@ T
@ T
A
C
= +25°C
= +25°C
NPN SILICON SWITCHING TRANSISTOR
A
C
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
> 25°C
> 25°C
C
= +25°C unless otherwise noted)
A
= +25°C, unless otherwise noted)
RADIATION HARDENED
2N3500
2N3500L
Qualified per MIL-PRF-19500/366
Symbol
Symbol
T
V
V
V
R
R
J
P
, T
CBO
I
CEO
EBO
θJC
θJA
C
T
Symbol
V
stg
(BR)CEO
I
CBO
2N3498*
2N3499*
TECHNICAL DATA SHEET
100
100
500
6.0
-65 to +200
Min.
100
150
Max.
175
1.0
5.0
30
2N3501
2N3501L
2N3501UB
2N3501*
2N3501*
150
150
300
Max.
6.0
50
50
10
10
mAdc
°C/W
°C/W
ηAdc
ηAdc
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
°C
W
W
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
TO-39* (TO-205AD)
2N3498L, 2N3499L
2N2500L, 2N3501L
2N3498, 2N3499
2N3500, 2N3501
2N3501UB
LEVELS
TO-5*
3 PIN
Page 1 of 3

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2N3501JANTX Summary of contents

Page 1

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR DEVICES 2N3498 2N3499 2N3498L 2N3499L ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ T = +25°C Total Power Dissipation ...

Page 2

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR ELECTRICAL CHARACTERISTICS (T Parameters / Test Conditions OFF CHARACTERISTICS Emitter-Base Cutoff Current V = 4.0Vdc 6.0Vdc EB (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc 10Vdc 1.0mAdc 10Vdc 10mAdc 10Vdc C CE ...

Page 3

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time V = 5Vdc 150mAdc 15mAdc Turn-Off Time I = 150mAdc 15mAdc SAFE OPERATING AREA DC Tests ≥ 10ηs; 1 Cycle 1. +25° Test 1 ...

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