2N6193 MICROSEMI, 2N6193 Datasheet
2N6193
Manufacturer Part Number
2N6193
Description
Manufacturer
MICROSEMI
Datasheet
1.2N6193.pdf
(2 pages)
Specifications of 2N6193
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
6V
Collector Current (dc) (max)
5A
Dc Current Gain (min)
60
Power Dissipation
1W
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6193
Manufacturer:
ST/MOTO
Quantity:
20 000
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices
2N6193
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 5.71mW/
2) Derate linearly 57.1mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Operating & Storage Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Sustaining Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
I
V
V
V
V
C
CE
EB
CE
CB
= 50 mAdc
= 100 Vdc
= 6.0 Vdc
= 90 Vdc, V
= 100 Vdc
Characteristics
BE
Ratings
= 1.5 Vdc
0
0
Characteristics
C for T
C for T
@ T
@ T
A
C
> +25
> +25
A
C
= +25
= +25
0
0
C
C
0
0
C
C
(2)
(1)
A
= 25
0
Symbol
C unless otherwise noted)
T
Symbol
V
V
V
op
R
P
I
I
CEO
CBO
EBO
,
C
B
T
JC
T
stg
-65 to +200
2N6193
Max.
17.5
100
100
6.0
5.0
1.0
1.0
10
V
Symbol
CEO(sus)
I
I
I
I
CBO
CEO
EBO
CEX
TECHNICAL DATA
Units
0
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
W
W
0
C
Min.
100
*See appendix A for
package outline
Qualified Level
JAN, JANTX
Max.
100
100
10
10
(TO-205AD)
JANTXV
TO-39*
Page 1 of 2
Unit
Vdc
120101
Adc
Adc
Adc
Adc
Related parts for 2N6193
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MICROSEMI DIODE
Manufacturer:
MICROSEMI
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
2N6193 Summary of contents
Page 1
... C Collector-Emitter Cutoff Current V = 100 Vdc CE Emitter-Base Cutoff Current V = 6.0 Vdc EB Collector-Emitter Cutoff Current Vdc 1.5 Vdc CE BE Collector-Base Cutoff Current V = 100 Vdc CB 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Symbol 2N6193 V CEO V CBO V EBO ( ...
Page 2
... Adc CE C Test Vdc mAdc CE C (3) Pulse Test: Pulse Width = 300 s, Duty Cycle 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N6193 JAN SERIES f 1.0 MHz f 1.0 MHz = 3.0 Vdc BE(off) 0.2 Adc = 2.0 Adc, 2.0%. Symbol Min. ...