MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 32

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 26:
Figure 27:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
R/B#
I/Ox
R/B#
I/Ox
00h
00h
INTERNAL DATA MOVE
INTERNAL DATA MOVE with RANDOM DATA INPUT
(5 cycles)
Address
(5 cycles)
Address
35h
35h
t
R
85h
t R
(5 cycles)
Address
85h
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
(5 cycles)
Address
Data
32
85h
Unlimited number
of repetitions.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10h
(2 cycles)
Address
t PROG
Data
10h
70h
Command Definitions
t
PROG
©2004 Micron Technology, Inc. All rights reserved.
70h
Status
Status