LM4871LD/NOPB National Semiconductor, LM4871LD/NOPB Datasheet - Page 12

• Manufacturer Part Number: LM4871LD/NOPB
• Description: IC AMP AUDIO PWR 3W MONO AB 8LLP
• Manufacturer: National Semiconductor
• Series: Boomer®r
• Type: Class ABr

Specifications of LM4871LD/NOPB

• Output Type: 1-Channel (Mono)
• Max Output Power X Channels @ Load: 3W x 1 @ 3 Ohm
• Voltage - Supply: 2 V ~ 5.5 V
• Features: Shutdown, Thermal Protection
• Mounting Type: Surface Mount
• Package / Case: 8-LLP
• Amplifier Class: AB
• No. Of Channels: 1
• Output Power: 2.38W
• Supply Voltage Range: 2V To 5.5V
• Load Impedance: 3ohm
• Operating Temperature Range: -40°C To +85°C
• Amplifier Case Style: LLP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LM4871LD; LM4871LDTR

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LM4871 MDA MWA 3W Audio Power Amplifier With Shutdown Mode
Die/Wafer Characteristics
SIGNAL NAME
SHUTDOWN
BYPASS
NC
INPUT +
INPUT -
GND
VOUT 1
GND
VDD
GND
VOUT 2
GND
Physical Die Identification
Die Step
Wafer Diameter
Dise Size (Drawn)
Thickness
Min Pitch
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
PAD# NUMBER
Fabrication Attributes
Physical Attributes
10
11
12
1
2
3
4
5
6
7
8
9
(Referenced to die center, coordinates in µm) NC = No Connection
Die Bond Pad Coordinate Locations (C - Step)
-559
-559
-559
-559
-559
-476
-135
-135
-473
554
554
554
X/Y COORDINATES
LM4871C
C
150mm
1372µm x 1758µm
54mils x 69mils
406µm Nominal
164µm Nominal
X
Die Layout (C - Step)
12
-248
-486
-725
-598
-686
541
376
568
598
752
-45
-4
Y
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
Back Side Metal
Back Side Connection
10000840
102
102
102
102
102
102
102
102
102
102
102
102
General Die Information
X
PAD SIZE
x
x
x
x
x
x
x
x
x
x
x
x
102µm x 102µm
0.5%
COPPER_BAL.
ALUMINUM
NITRIDE
BARE BACK
GND
102
102
210
102
102
102
210
102
210
102
210
102
Y