JAN2N720A MICROSEMI, JAN2N720A Datasheet
JAN2N720A
Manufacturer Part Number
JAN2N720A
Description
Manufacturer
MICROSEMI
Datasheet
1.JAN2N720A.pdf
(2 pages)
Specifications of JAN2N720A
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
120V
Emitter-base Voltage
7V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
20
Power Dissipation
500mW
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / Rohs Status
Not Compliant
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 2.86 mW/
2) Derate linearly 10.3 mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (R
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
I
I
V
V
V
V
C
C
CB
CB
EB
EB
= 30 mAdc
= 10 mAdc, R
= 120 Vdc
= 90 Vdc
= 7.0 Vdc
= 5.0 Vdc
Characteristics
BE
Ratings
= 10
0
0
Characteristics
C for 2N720A, 4.57 mW/
C for 2N720A, 17.2 mW/
BE
@ T
@ T
= 10 )
A
C
= +25
= +25
0
0
C
C
(2)
(1)
A
= 25
2N1893
2N1893S
0
0
C for 2N1893, S T
C for 2N1893, S T
0
Symbol
C unless otherwise noted)
Symbol
T
V
V
V
V
R
J
,
P
CBO
I
CEO
EBO
CER
T
C
T
JC
srg
2N720A 2N1893, S
2N720A 2N1893, S
0.5
1.8
97
All Devices
-65 to +200
A
C
> 25
> 25
120
100
500
7.0
80
V
V
Symbol
(BR)
0
(BR)
0
I
I
C
C
CBO
EBO
0.8
3.0
58
CEO
CER
TECHNICAL DATA
Units
mAdc
0
Unit
Vdc
Vdc
Vdc
Vdc
C/W
W
0
C
Min.
100
80
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
Qualified Level
Max.
10
10
10
10
JANTXV
JANTX
JAN
Page 1 of 2
Unit
Vdc
Vdc
120101
Adc
Adc
Adc
Adc
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JAN2N720A Summary of contents
Page 1
NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage ( Collector Current Total Power Dissipation @ Operating & Storage ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1 mAdc Vdc mAdc Vdc 150 mAdc Vdc C CE ...