EFM32TG110F32-QFN24 Energy Micro, EFM32TG110F32-QFN24 Datasheet - Page 24

• Manufacturer Part Number: EFM32TG110F32-QFN24
• Description: MCU 32-Bit EFM32 ARM Cortex M3 RISC 32KB Flash 2.5V/3.3V 24-Pin QFN EP
• Manufacturer: Energy Micro

Specifications of EFM32TG110F32-QFN24

• Package: 24QFN EP
• Device Core: ARM Cortex M3
• Family Name: EFM32
• Maximum Speed: 32 MHz
• Ram Size: 4
• Program Memory Size: 32
• Operating Supply Voltage: 2.5|3.3 V
• Data Bus Width: 32 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 17
• Interface Type: I2C/I2S/SPI/UART/USART
• On-chip Adc: 2-chx12-bit
• On-chip Dac: 1-chx12-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 3

3.9.2 HFXO
3.9.3 LFRCO
2011-07-26 - d0013_Rev0.92
Table 3.11. HFXO
Table 3.12. LFRCO
Symbol
f
ESR
g
C
DC
I
t
Symbol
f
t
I
TUNESTEP
FRCO
HFXO
HFXO
HFXO
LFRCO
LFRCO
LFRCO
mHFXO
HFXOL
HFXO
HFXO
L-
Parameter
Supported nominal crystal
Frequency
Supported crystal equiv-
alent series resistance
(ESR)
The transconductance of
the HFXO input transistor
at crystal startup
Supported crystal external
load range
Duty cycle
Current consumption for
HFXO after startup
Startup time
Parameter
Oscillation frequency ,
V
Startup time not including
software calibration
Current consumption
Frequency step for LSB
change in TUNING value
DD
= 3.0 V, T
AMB
=25°C
Condition
Crystal frequency 32 MHz
Crystal frequency 4 MHz
HFXOBOOST in CMU_CTRL
equals 0b11
4 MHz: ESR=400 Ohm,
C
CMU_CTRL equals 0b11
32 MHz: ESR=30 Ohm,
C
CMU_CTRL equals 0b11
32 MHz: ESR=30 Ohm,
C
CMU_CTRL equals 0b11
Condition
L
L
L
=20 pF, HFXOBOOST in
=10 pF, HFXOBOOST in
=10 pF, HFXOBOOST in
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24
Min
Min
20
46
4
5
Typ
Typ
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400
165
400
150
190
1.5
30
50
85
32
Max
Max
1500 Ohm
32 MHz
60 Ohm
25 pF
54 %
Unit
mS
µA
µA
µs
Unit
kHz
µs
nA
%