UPA801T-T1-A CALIFORNIA EASTERN LABS, UPA801T-T1-A Datasheet

UPA801T-T1-A

Manufacturer Part Number

UPA801T-T1-A

Description

Manufacturer

CALIFORNIA EASTERN LABS

Datasheet

1.UPA801T-T1-A.pdf (8 pages)

Specifications of UPA801T-T1-A

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

12V

Collector-base Voltage

20V

Emitter-base Voltage

Collector Current (dc) (max)

100mA

Dc Current Gain (min)

Power Dissipation

200mW

Frequency (max)

4.5GHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-363

Lead Free Status / Rohs Status

Compliant

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• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• HIGH COLLECTOR CURRENT: 100mA

NEC's UPA801T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

suited for pager and other hand-held wireless applications.

ELECTRICAL CHARACTERISTICS

DESCRIPTION

Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

FEATURES

SYMBOLS

, low voltage bias and small size make this device ideally

2 NE856 Die in a 2 mm x 1.25 mm package

NF = 1.2 dB TYP at 1 GHz

FE1

Cre

CBO

EBO

21E

FE 1

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA801T-T1, 3K per reel.

FE2

= 9.0 dB TYP at 1 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

Ratio: h

PARAMETERS AND CONDITIONS

FE1

FE2

PACKAGE OUTLINE

= Smaller Value of Q

= Larger Value pf Q

PART NUMBER

= 3 V, I

FREQUENCY TRANSISTOR

= 7 mA, f = 1 GHz

= 1 V, I

= 3 V, I

= 10 V, I

= 7 mA

or Q

= 7 mA, f = 1 GHz

or Q

= 0

= 7 mA

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

2.0 ± 0.2

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

OUTLINE DIMENSIONS

Note:

Pin 3 is identified with a circle on the bottom of the package.

0.9 ± 0.1

1.3

0.7

0.65

California Eastern Laboratories

0.85

MIN

3.0

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

UPA801T

TYP

S06

120

4.5

0.7

1.2

(Units in mm)

UPA801T

0.2 (All Leads)

0.15

MAX

250

1.0

1.5

2.5

+0.10

- 0.05

Related parts for UPA801T-T1-A

UPA801T-T1-A Summary of contents

Page 1

... Larger Value pf Q FE2 Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA801T-T1, 3K per reel. . NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... UPA801T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T 1 Die 2 Die T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage ...

Page 3

... Collector Current FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5 MHz 2.0 1.0 0.5 0.2 0 Collector to Base Voltage 25° GHz 50 (mA GHz 50 100 (mA (V) CB UPA801T INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 0 100 Collector Current, I (mA) C INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 0.5 1.0 2 ...

Page 4

... UPA801T TYPICAL SCATTERING PARAMETERS UPA801T mA Ω Ω Ω Ω Ω FREQUENCY S 11 (GHz) MAG ANG 0.10 .967 -22.9 0.20 .930 -45.8 0.30 .884 -67.1 0.40 .842 -86.9 0.50 .801 -103.1 0.60 .771 -117.0 0.70 .742 -130.0 0.80 .722 -141.2 0.90 .706 -151 ...

Page 5

... ORDERING INFORMATION PART NUMBER QUANTITY UPA801T-T1-A 3000 (T = 25° MAG ANG MAG ANG 8.934 148.0 .038 65.8 8.007 127.6 .060 53.1 6.898 112 ...

Page 6

NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1, Q2 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR 3.9 ITF ...

Page 7

NONLINEAR MODEL SCHEMATIC LC Pin_1 0.05 nH C_C1E1 0. Pin_2 0. Pin_3 0.05 nH Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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