TGI1314-50L Toshiba, TGI1314-50L Datasheet
TGI1314-50L
Manufacturer Part Number
TGI1314-50L
Description
Manufacturer
Toshiba
Datasheet
1.TGI1314-50L.pdf
(2 pages)
Specifications of TGI1314-50L
Lead Free Status / Rohs Status
Supplier Unconfirmed
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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TGI1314-50L
Manufacturer:
TOSHIBA
Quantity:
120
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Recommended gate resistance(Rg) : Rg= 13.3 Ω (TYP.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
Output Power
Gain Flatness
Drain Current
Power Added Efficiency
Gate Current
Linear Gain
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change
without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
FEATURES
HIGH POWER
HIGH GAIN
Pout=47.0dBm at Pin=42.0dBm
GL=8.0dB at 13.75GHz to 14.5GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
ηadd
IDS2
IDS1
Pout
ΔTch
Ig
ΔG
SYMBOL
GL
IM3
R
RF
V
V
I
th(c-c)
GSoff
DSS
gm
GSO
(VDS X IDS + Pin – Pout) X Rth(c-c)
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
f = 13.75 to 14.5GHz
=
=
=
CONDITIONS
Two-Tone Test
=
= 5
=
= 0V
@ Pin=42dBm
@Pin=20dBm
Po= 40.0dBm
CONDITIONS
IDSset≅2.0A
VDS = 24V
BROAD BAND INTERNALLY MATCHED HEMT
LOW INTERMODULATION DISTORTION
5.0A
23mA
5
5V
-10mA
HERMETICALLY SEALED PACKAGE
IM3(Min.)=−25dBc at Po=40.0dBm
V
V
MICROWAVE POWER GaN HEMT
TGI1314-50L
Draft
UNIT
° C/W
UNIT
dBm
mA
dB
dB
dBc
S
V
A
V
%
A
A
° C
Single Carrier Level
MIN.
MIN.
46.0
-40
7.0
-10
－
－
－
-25
－
⎯
⎯
⎯
-1
－
TYP. MAX.
TYP.
Rev. July, 2009
47.0
5.0
8.0
3.5
4.5
130
29
15
－
－
⎯
⎯
-4
－
MAX.
+100
±0.8
6.0
4.5
1.6
150
－
－
－
⎯
⎯
⎯
-6
－
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TGI1314-50L Summary of contents
Page 1
... TOSHIBA or others. The information contained herein is subject to change without prior notice therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaN HEMT TGI1314-50L BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION IM3(Min.)=− ...
Page 2
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE ( 7- AA04A ) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TGI1314-50L SYMBOL UNIT ...